QL82SD datasheet(44/60 Pages) ETC1

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QL82SD Device Data Sheet Rev C

Preliminary

NOTE: Condition: 2.5 V, 25

°C

Programmable Weak-Pull

Programmable weak pull-down resistors are available on each I/O. I/O Weak Pull-Down

eliminates the need for an external pull-down resistor for used I/O. The spec for pull-down

current is a maximum of 150 uA under a worst case condition.

-148 uA @ 3.6 V, -55 °C,

- 69 uA@ 2.5 V, 25 °C. Figure 53 illustrates the weak pull-down circuit.

Figure 53: I/O Weak Pull-Down Circuit

I/O Control and Local Hi-Drives

Each bank of I/Os has two input-only pins that can be programmed to drive the RST, CLK,

and EN inputs of I/O's in that bank. These input-only pins also double up as high-drive inputs

to a quadrant. Both as an I/O control or high-drive, these buffers can be driven by the

internal logic. The I/O control network and local high-drive performance is indicated in

Table 36

Table 35: 2.5 V Slew Rate

VCCIO = 2.5 V

Fast Slew

Slow Slew

Rising Edge

1.7 V/nS

0.6 V/vS

Falling Edge

1.9 V/nS

0.6 V/nS

Table 36: I/O Control Network/ Local Hi-Drive Performance

TT, 25C, 2.5V

From Pad

From Array

I/O (slow)

1.00 ns

1.14 ns

I/O (fast)

0.63 ns

0.78 ns

Skew

0.37 ns

0.36 ns

I/O

PAD

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