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F24 Datasheet(PDF) 143 Page - Renesas Technology Corp |
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F24 Datasheet(HTML) 143 Page - Renesas Technology Corp |
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143 / 210 page ![]() RL78/F23, F24 4. ELECTRICAL SPECIFICATIONS (GRADE 4) R01DS0446EJ0120 Rev.1.20 Page 143 of 207 Dec 31, 2025 4.10 Flash Memory Programming Characteristics (TA = -40 to +125 °C, 2.7 V ≤ EVDD0 = EVDD1 = VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit System clock frequency fCLK 2 40 MHz Number of code flash rewrites Notes 1, 2, 3 Cerwr Retained for 20 years TA = +85 °C Note 4 1,000 Times Number of data flash rewrites Notes 1, 2, 3 Retained for 20 years TA = +85 °C Note 4 10,000 Retained for 5 years TA = +85 °C Note 4 100,000 Erase time Terasa Block erase 5 ms Write time Twrwa 1 word write 10 µs Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The starting point of the retaining years are after the erase. 2. When using flash memory programmer and Renesas Electronics self programming code. 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. 4. The average temperature for data retention. (1) Code flash memory processing time (TA = -40 to +125 °C, 2.7 V ≤ EVDD0 = EVDD1 = VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V) Item fCLK = 2 MHz fCLK = 4 MHz fCLK = 8 MHz fCLK = 16 MHz Unit Conditions TYP. MAX. TYP. MAX. TYP. MAX. TYP. MAX. Programming time 4 bytes 74.0 690.0 61.0 580.0 56.0 530.0 54.0 510.0 µs Erasure time 1 KB 6.9 245.0 6.1 230.0 5.8 225.0 5.6 220.0 ms Blank checking time 4 bytes – 29.0 – 22.0 – 19.0 – 17.0 µs 1 KB – 800.0 – 405.0 – 245.0 – 145.0 µs Internal verify time 4 bytes – 350.0 – 175.0 – 90.0 – 45.0 µs 1 KB – 19.0 – 9.5 – 5.0 – 2.5 ms Item fCLK = 20 MHz fCLK = 32 MHz fCLK = 40 MHz Unit Conditions TYP. MAX. TYP. MAX. TYP. MAX. Programming time 4 bytes 54.0 510.0 53.0 500.0 53.0 500.0 µs Erasure time 1 KB 5.6 220.0 5.5 220.0 5.5 220.0 ms Blank checking time 4 bytes – 17.0 – 16.0 – 16.0 µs 1 KB – 145.0 – 135.0 – 135.0 µs Internal verify time 4 bytes – 35.0 – 22.0 – 18.0 µs 1 KB – 2.0 – 1.2 – 1.0 ms Caution The listed values do not include the time until the operations of the flash memory start following execution of an instruction by software. |
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