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F24 Datasheet(PDF) 143 Page - Renesas Technology Corp

Part # F24
Description  RENESAS MCU
PDF  210 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

F24 Datasheet(HTML) 143 Page - Renesas Technology Corp

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RL78/F23, F24
4. ELECTRICAL SPECIFICATIONS (GRADE 4)
R01DS0446EJ0120 Rev.1.20
Page 143 of 207
Dec 31, 2025
4.10 Flash Memory Programming Characteristics
(TA = -40 to +125
°C, 2.7 V ≤ EVDD0 = EVDD1 = VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
System clock frequency
fCLK
2
40
MHz
Number of code flash rewrites Notes 1, 2, 3
Cerwr
Retained for 20 years
TA = +85
°C Note 4
1,000
Times
Number of data flash rewrites Notes 1, 2, 3
Retained for 20 years
TA = +85
°C Note 4
10,000
Retained for 5 years
TA = +85
°C Note 4
100,000
Erase time
Terasa
Block erase
5
ms
Write time
Twrwa
1 word write
10
µs
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The starting point of the retaining years are after the
erase.
2. When using flash memory programmer and Renesas Electronics self programming code.
3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas
Electronics Corporation.
4. The average temperature for data retention.
(1)
Code flash memory processing time
(TA = -40 to +125
°C, 2.7 V ≤ EVDD0 = EVDD1 = VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)
Item
fCLK = 2 MHz
fCLK = 4 MHz
fCLK = 8 MHz
fCLK = 16 MHz
Unit
Conditions
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
Programming time
4 bytes
74.0
690.0
61.0
580.0
56.0
530.0
54.0
510.0
µs
Erasure time
1 KB
6.9
245.0
6.1
230.0
5.8
225.0
5.6
220.0
ms
Blank checking time
4 bytes
–
29.0
–
22.0
–
19.0
–
17.0
µs
1 KB
–
800.0
–
405.0
–
245.0
–
145.0
µs
Internal verify time
4 bytes
–
350.0
–
175.0
–
90.0
–
45.0
µs
1 KB
–
19.0
–
9.5
–
5.0
–
2.5
ms
Item
fCLK = 20 MHz
fCLK = 32 MHz
fCLK = 40 MHz
Unit
Conditions
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
Programming time
4 bytes
54.0
510.0
53.0
500.0
53.0
500.0
µs
Erasure time
1 KB
5.6
220.0
5.5
220.0
5.5
220.0
ms
Blank checking time
4 bytes
–
17.0
–
16.0
–
16.0
µs
1 KB
–
145.0
–
135.0
–
135.0
µs
Internal verify time
4 bytes
–
35.0
–
22.0
–
18.0
µs
1 KB
–
2.0
–
1.2
–
1.0
ms
Caution The listed values do not include the time until the operations of the flash memory start following
execution of an instruction by software.



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