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HD6433644R Datasheet(PDF) 174 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 174 Page - Renesas Technology Corp |
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174 / 549 page  Section 6 ROM Rev. 6.00 Sep 12, 2006 page 154 of 526 REJ09B0326-0600 High-Speed, High-Reliability Erasing: The flash memory in the H8/3644F, H8/3643F, and H8/3642AF uses a high-speed, high-reliability erasing procedure. This procedure provides higher erasing speed without subjecting the device to voltage stress and without sacrificing the reliability of data reliability. Figure 6.19 shows the basic high-speed, high-reliability erasing flowchart. Tables 6.15 and 6.16 list the electrical characteristics during erasing. Start End Error Program all bits to 0* Address = 0 n = 0 n + 1 → n Erase setup/erase command Erase-verify command NG No No Yes OK Yes Wait (10 ms) Wait (6 µs) Address + 1 → address Verify? n = 3000? Last address? Note: * Follow the high-speed, high-reliability programming flowchart in programming all bits. If 0 has already been written, perform programming for unprogrammed bits. Figure 6.19 High-Speed, High-Reliability Erasing |
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