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HD6433644R Datasheet(PDF) 173 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 173 Page - Renesas Technology Corp |
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173 / 549 page ![]() Section 6 ROM Rev. 6.00 Sep 12, 2006 page 153 of 526 REJ09B0326-0600 High-Speed, High-Reliability Programming: Unused areas of the flash memory in the H8/3644F, H8/3643F, or H8/3642AF contain H'FF data (initial value). The flash memory uses a high-speed, high-reliability programming procedure. This procedure provides higher programming speed without subjecting the device to voltage stress and without sacrificing the reliability of the programmed data. Figure 6.18 shows the basic high-speed, high-reliability programming flowchart. Tables 6.15 and 6.16 list the electrical characteristics during programming. Start End Error Set VPP = 12.0 V ±0.6 V Address = 0 n = 0 n + 1 → n Program setup command NG No No Yes OK Yes Program command Wait (25 µs) Program-verify command Wait (6 µs) Address + 1 → address Set VPP = VCC Verify? n = 20? Last address? Figure 6.18 High-Speed, High-Reliability Programming |
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