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HD6433644R Datasheet(PDF) 176 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 176 Page - Renesas Technology Corp |
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176 / 549 page ![]() Section 6 ROM Rev. 6.00 Sep 12, 2006 page 156 of 526 REJ09B0326-0600 Table 6.16 AC Characteristics in PROM Mode (Conditions: VCC = 5.0 V ±10%, VPP = 12.0 V ±0.6 V, VSS = 0 V, Ta = 25°C ±5°C) Item Symbol Min Typ Max Unit Test Conditions Command write cycle tCWC 120 ns Figure 6.20 Address setup time tAS 0 ns Figure 6.21* Address hold time tAH 60 ns Figure 6.22 Data setup time tDS 50 ns Data hold time tDH 10 ns CE setup time tCES 0 ns CE hold time tCEH 0 ns VPP setup time tVPS 100 ns VPP hold time tVPH 100 ns WE programming pulse width tWEP 70 ns WE programming pulse high time tWEH 40 ns OE setup time before command write tOEWS 0 ns OE setup time before verify tOERS 6 µs Verify access time tVA 500 ns OE setup time before status polling tOEPS 120 ns Status polling access time tSPA 120 ns Program wait time tPPW 25 µs Erase wait time tET 9 11 ms Output disable time tDF 0 40 ns Total auto-erase time tAET 0.5 30 s Notes: The CE, OE, and WE pins should be driven high during transitions of VPP from 5 V to 12 V and from 12 V to 5 V. * Input pulse level: 0.45 V to 2.4 V Input rise time and fall time ≤ 10 ns Timing reference levels: 0.8 V and 2.0 V for input; 0.8 V and 2.0 V for output |
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