R8CSLASH15 datasheet(231/277 Pages) RENESAS

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R8C/14 Group, R8C/15 Group

19. Electrical Characteristics

Rev.2.10

Jan 19, 2006

Page 219 of 253

REJ09B0164-0210

NOTES:

VCC = AVcc = 2.7 to 5.5V at Topr = 0 to 60

°C, unless otherwise specified.

Definition of program and erase

The program and erase endurance shows an erase endurance for every block.

If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.

For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that

block, program and erase endurance is counted as one time.

However, do not perform multiple programs to the same address for one time ease.(disable overwriting).

Endurace to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).

In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram

endurance not to leave blank area as possible such as programming write addresses in turn . If programming a set of 16

bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,

averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for

every block as information and determine the restricted endurance are recommended.

If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at

least three times until the erase error does not occur.

Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.

The data hold time incudes time that the power supply is off or the clock is not supplied.

Table 19.4

Flash Memory (Program ROM) Electrical Characteristics

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

−

Program/Erase Endurance(2)

R8C/14 Group

100(3)

−−

times

R8C/15 Group

1,000(3)

−−

times

−

Byte Program Time

VCC = 5.0 V at Topr = 25

°C

−

400

µs

−

Block Erase Time

VCC = 5.0 V at Topr = 25

°C

−

0.4

td(SR-ES)

Time Delay from Suspend Request until

Erase Suspend

−−

8ms

−

Erase Suspend Request Interval

−−

−

Program, Erase Voltage

2.7

−

5.5

−

Read Voltage

2.7

−

5.5

−

Program, Erase Temperature

−

°C

−

Data Hold Time(7)

Ambient temperature = 55

°C20

−−

year

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