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TMS55166 Datasheet(PDF) 44 Page - Texas Instruments |
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TMS55166 Datasheet(HTML) 44 Page - Texas Instruments |
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44 / 70 page ![]() TMS55165, TMS55166, TMS55175, TMS55176 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS463 – DECEMBER 1995 44 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS CAS A0 – A8 WEx DSF TRG DQ0 – DQ15 tc(W) tw(RL) tw(RH) td(RLCH) tt td(CLRH) tw(CL) td(CHRL) th(RA) tt th(RLCA) tsu(CA) tsu(RA) th(CLCA) tw(CH) 1 23 th(SFR) tsu(SFR) tsu(SFC) th(SFC) tsu(TRG) tsu(WMR) tsu(WCH) tsu(WRH) th(RLW) th(CLW) tsu(WCL) th(RWM) tsu(DQR) tsu(DCL) tw(WL) th(CLD) th(RLD) Row td(CARH) td(RLCA) td(RLCA) Block Address† th(RDQ) td(RLCL) td(CHRL) th(TRG) td(CACH) td(RSF) † For 4-column block write (TMS5516x), block address is A2 – A8; for 8-column block write (TMS5517x), block address is A3 – A8. Figure 35. Block-Write-Cycle Timing (Early Write) Table 10. Block-Write-Cycle State Table CYCLE STATE CYCLE 1 2 3 Block-write operation (nonmasked) H Don’t care Column mask Block-write operation with nonpersistent write-per-bit L Write mask Column mask Block-write operation with persistent write-per-bit L Don’t care Column mask |
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