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TMS55166 Datasheet(PDF) 26 Page - Texas Instruments |
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TMS55166 Datasheet(HTML) 26 Page - Texas Instruments |
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26 / 70 page ![]() TMS55165, TMS55166, TMS55175, TMS55176 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS463 – DECEMBER 1995 26 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 load color register (continued) RAS CAS A0 – A8 WEx TRG DSF DQ0 – DQ15 1 23 5 6 Load-Mask-Register Cycle Load-Color-Register Cycle Persistent Write-Per-Bit Block-Write Cycle 1 4 Legend: 1. Refresh address: A0 – A8 are latched on the falling edge of RAS. 2. Row address: A0 – A8 are latched on the falling edge of RAS. 3. Block address A2 – A8 (TMS5516x) or A3 – A8 (TMS5517x) are latched on the falling edge of CAS. 4. Color data: DQ0 – DQ15 are latched on the falling edge CAS or the first falling edge of WEx, whichever occurs first. 5. Write-mask data: DQ0 – DQ15 are latched on the falling edge RAS. 6. Column-mask data: DQ0 – DQ15 are latched on the falling edge CAS or the first falling edge of WEx, whichever occurs first. = don’t care Figure 17. Example of a Persistent Block Write DRAM-to-SAM transfer operation During the DRAM-to-SAM transfer operation, one half of a row (256 columns) in the DRAM array is selected to be transferred to the 256-bit serial-data register. The transfer operation is invoked by bringing TRG low and holding WEx high on the falling edge of RAS. The state of DSF, which is latched on the falling edge of RAS, determines whether the full-register-transfer operation or the split-register-transfer operation is performed. Table 5. SAM Function Table FUNCTION RAS FALL CAS FALL ADDRESS DQ0 – DQ15 MNE FUNCTION CAS TRG WEx† DSF DSF RAS CAS RAS CAS WEx MNE CODE Full-register-transfer read H L H L X Row Addr Tap Point X X RT Split-register-transfer read H L H H X Row Addr Tap Point X X SRT † Logic L is selected when either or both WEL and WEU are low. X = don’t care |
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