C511 datasheet(112/128 Pages) SIEMENS

112 / 128 page

EEPROM Programming Interface

SAB-C513A-H

Semiconductor Group

9-12

9.2.5.2

Write Operation

The following sequence of operations is necessary for writing (programming) bytes or memory

blocks:

1. Writing the data byte to be programmed into the register PDATA.

2. Selection of the memory area (block or single byte) to be written by programming PMSEL.

3. Writing the address of the byte/block to be programmed into PADRH and PADRL.

4. Set EEPROM operation mode bits in PCNTRL to EOM2-0=010B and the PROG bit to 1.

5. Wait at least 10 ms.

6. Reset the PROG bit to 0 with still EOM2-0=010B.

7. Wait 20

µs (guard time for discharging high voltage generator).

8. Set EOM2-0=000B and PROG=0.

The steps of the program operation are illustrated in figure 9-9-7.

Figure 9-7

Write (Programming) Sequence

Before writing (programming) a memory location it should be erased (=FFH), otherwise the old data

would be “and-ed’ with the new data and the result being programmed.

9.2.5.3

Read Operation

The following sequence of operations is necessary for reading of a byte:

1. Writing the address of the byte to be read into PADRH and PADRL.

2. Set EEPROM operation mode bits in PCNTRL to EOM2-0=100B and select whether automatic

address increment should be performed (ADRI=1) or not (ADRI=0)

3. Perform a read from register PDATA. The content of the selected memory location will be

transferred during this read.

Read operations can be done on the byte selected by PADRH/PADRL only. A requested block

operation (SEL bits in PMSEL) will be ignored.

The automatic address increment mode reduces the overhead when reading out the memory but

also when programming subsequent locations: when doing the read for verifying correct

programming, the address is automatically incremented and points to the next location to be

programmed.

C511 Datasheet(PDF) 112 Page - Siemens Semiconductor Group