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HD6433644R Datasheet(PDF) 126 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 126 Page - Renesas Technology Corp |
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126 / 549 page  Section 6 ROM Rev. 6.00 Sep 12, 2006 page 106 of 526 REJ09B0326-0600 6.3.1 Writing and Verifying An efficient, high-speed, high-reliability method is available for writing and verifying the PROM data. This method achieves high speed without voltage stress on the device and without lowering the reliability of written data. Data in unused address areas has a value of H'FF. The basic flow of this high-speed, high-reliability programming method is shown in figure 6.3. Start Set write/verify mode V = 6.0 V ±0.25 V, V = 12.5 V ±0.3 V CC PP Address = 0 n = 0 n + 1 n → PW Verify Write time t = 3n ms OPW Last address? Set read mode VCC = 5.0 V ±0.5 V, VPP = VCC Read all addresses? End Error n 25 < Address + 1 address → No Yes NG OK Yes No NG Yes Write time t = 0.2 ms ±5% Figure 6.3 High-Speed, High-Reliability Programming Flow Chart |
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