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HD6433644R Datasheet(PDF) 129 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 129 Page - Renesas Technology Corp |
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129 / 549 page ![]() Section 6 ROM Rev. 6.00 Sep 12, 2006 page 109 of 526 REJ09B0326-0600 Figure 6.4 shows a PROM write/verify timing diagram. Address Data VPP VCC CE OE VPP VCC VCC VCC Write Verify Input data Output data tAS tDS tVPS tVCS tPW tOPW* tDH tOES tOE tDF tAH Note: * tOPW is defined by the value given in figure 6.3, High-Speed, High-Reliability Programming Flow Chart. +1 Figure 6.4 PROM Write/Verify Timing 6.3.2 Programming Precautions • Use the specified programming voltage and timing. The programming voltage in PROM mode (VPP) is 12.5 V. Use of a higher voltage can permanently damage the chip. Be especially careful with respect to PROM programmer overshoot. Setting the PROM programmer to Renesas Technology specifications for the HN27C256 will result in correct VPP of 12.5 V. • Make sure the index marks on the PROM programmer socket, socket adapter, and chip are properly aligned. If they are not, the chip may be destroyed by excessive current flow. Before programming, be sure that the chip is properly mounted in the PROM programmer. |
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