HD6433644R datasheet(146/549 Pages) RENESAS

146 / 549 page

Section 6 ROM

Rev. 6.00 Sep 12, 2006 page 126 of 526

REJ09B0326-0600

User Program Mode Execution Procedure*1: The procedure for user program execution in

RAM is shown below.

Reset-start (TEST = VSS)

Branch to flash memory on-board

reprogramming program

Transfer flash memory

reprogramming routine to RAM

Branch to flash memory

reprogramming routine in RAM area

FVPP = 12 V

(user program mode)

Execute flash memory

reprogramming routine in RAM area

(flash memory reprogramming)

Release FVPP

(exit user program mode)

Branch to flash memory application

program*2

Procedure:

An on-board reprogramming program must be written into

flash memory by the user beforehand.

1. Set the TEST pin to VSS and execute a reset-start.

2. Branch to the on-board reprogramming program written to

flash memory.

3. Transfer the flash memory reprogramming routine to the

RAM area.

4. Branch to the flash memory reprogramming routine

transferred to the RAM area.

5. Apply 12 V to the FVPP pin. (Transition to user program

mode)

6. Execute the flash memory reprogramming routine in the

RAM area, an perform on-board reprogramming of the

flash memory.

7. Switch the FVPP pin from 12 V to VCC, and exit user

program mode.

8. After on-board reprogramming of the flash memory ends,

branch to the flash memory application program.

Notes: 1. Do not apply 12 V to the FVPP pin during normal operation. To prevent inadvertent programming or

erasing due to program runaway, etc., apply 12 V to the FVPP pin only when the flash memory is

being programmed or erased . Memory cells may not operate normally if overprogrammed or

overerased due to program runaway, etc. Also, while 12 V is applied to the FVPP pin, the watchdog

timer should be activated to prevent overprogramming or overerasing due to program runaway, etc.

For further information on FVPP application, release, and cut-off, see note 5 in section 6.9, Flash

Memory Programming and Erasing Precautions.

2. When the application of 12 V to the FVPP pin is released after programming is completed, the flash

memory read setup time (tFRS) must elapse before executing a program in flash memory. This

specifies the setup time from the point at which the FVPP voltage reaches the VCC + 2 V level after

12 V application is released until the flash memory is read.

Figure 6.12 Example of User Program Mode Operation

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