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HD6433644R Datasheet(PDF) 148 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 148 Page - Renesas Technology Corp |
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148 / 549 page ![]() Section 6 ROM Rev. 6.00 Sep 12, 2006 page 128 of 526 REJ09B0326-0600 6.7.2 Program-Verify Mode In program-verify mode, the data written in program mode is read to check whether it has been correctly written in the flash memory. After the elapse of the programming time, exit programming mode (clear the P bit to 0) and select program-verify mode (set the PV bit to 1). In program-verify mode, a program-verify voltage is applied to the memory cells at the latched address. If the flash memory is read in this state, the data at the latched address will be read. After selecting program-verify mode, wait at least 4 µs before reading, then compare the programmed data with the verify data. If they agree, exit program-verify mode and program the next address. If they do not agree, select program mode again and repeat the same program and program-verify sequence. Do not repeat the program and program-verify sequence more than six times* for the same bit. Note: * When a bit is programmed repeatedly, set a loop counter so that the total programming time will not exceed 1 ms. |
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