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HD6433644R Datasheet(PDF) 153 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 153 Page - Renesas Technology Corp |
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153 / 549 page ![]() Section 6 ROM Rev. 6.00 Sep 12, 2006 page 133 of 526 REJ09B0326-0600 6.7.6 Erase Flowcharts and Sample Programs Flowchart for Erasing One Block Start End of erase Erase error Set erase block register (set bit for block to be erased to 1) Write 0 data in all addresses to be erased (prewrite)*1 Select erase mode (E bit = 1 in FLMCR) n = 1 Wait (x) ms *5 Clear E bit Erasing halts End of erase-verify No No NG No OK Yes Yes Yes Enable watchdog timer *2 Disable watchdog timer Select erase-verify mode (EV bit = 1) Dummy write to verify address *3 (flash memory latches address) Set block start address as verify address Wait (tvs1) µs *6 Wait (tvs2) µs *6 Clear EV bit Address + 1 → address Clear EV bit n + 1 → n Double the erase time (x × 2 → x) Clear erase block register (clear bit for erased block to 0) Verify *4 (read data H'FF?) Last address? n ≥ N? *6 n > 4? Notes: 1. Program all addresses to be erased by following the prewrite flowchart. 2. Set the watchdog timer overflow interval to the initial value shown in table 6.12. 3. For the erase-verify dummy write, write H'FF using a byte transfer instruction. 4. For the erase-verify operation, read the data using a byte transfer instruction. When erasing multiple blocks, clear the erase block register bits for erased blocks and perform additional erasing only for unerased blocks. 5. Erase time x is successively incremented to initial set value x 2n-1 (n = 1 to 4), and is fixed from the 4th time onward. An initial value of 6.25 ms or less should be set, and the time for one erasure should be 50 ms or less. 6. tvs1: 4 µs or more tvs2: 2 µs or more N: 602 (set N so that the total erase time does not exceed 30 s) Figure 6.14 Erase Flowchart |
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