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HD6433644R Datasheet(PDF) 184 Page - Renesas Technology Corp |
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HD6433644R Datasheet(HTML) 184 Page - Renesas Technology Corp |
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184 / 549 page ![]() Section 6 ROM Rev. 6.00 Sep 12, 2006 page 164 of 526 REJ09B0326-0600 the 0 or 1 status of this bit. A byte data comparison is necessary to check whether 12V is being applied. The relevant coding is shown below. . . LABEL1: MOV.B @H'FF80, R1L CMP.B #H'FF, R1L BEQ LABEL1 . . . Sample program for detection of 12 V application to FVPP (user mode) Table 6.17 Flash Memory DC Characteristics VCC = 3.0 V to 5.5 V, AVCC = 3.0 V to 5.5 V, AVREF = 3.0 V to AVCC, VSS = AVSS = 0 V, VPP = 12.0 V ±0.6 V Ta = –20°C to +75°C (regular specifications), Ta = –40°C to +85°C (wide-range specifications) Item Symbol Min Typ Max Unit Test Conditions High voltage (12 V) application criterion level* FVPP, TEST VH VCC + 2 11.4 V FVPP current Read IPP 10 µA VPP = 2.7 to 5.5 V 10 20 mA VPP = 12.6 V Program 20 40 mA Erase 20 40 mA Note: * The high voltage application criterion level is as shown in the table above, but a setting of 12.0 V ±0.6 V should be made in boot mode and when programming and erasing flash memory. |
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