HD6433644R datasheet(185/549 Pages) RENESAS

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Section 6 ROM

Rev. 6.00 Sep 12, 2006 page 165 of 526

REJ09B0326-0600

Table 6.18 Flash Memory AC Characteristics

VCC = 3.0 V to 5.5 V, AVCC = 3.0 V to 5.5 V, AVREF = 3.0 V to AVCC, VSS = AVSS = 0 V,

VPP = 12.0 V ±0.6 V

Ta = –20°C to +75°C (regular specifications), Ta = –40°C to +85°C (wide-range specifications)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Programming time*



1000

µs

Erase time*



Reprogramming capability

NWEC



100

Times

Verify setup time 1*

tVS1



µs

Verify setup time 2*

tVS2



µs

Flash memory read setup time*

tFRS



µs

VCC ≥ 4.5 V

100



VCC < 4.5 V

Notes: 1. Follow the program/erase algorithms shown in section 6 when making the settings.

2. Indicates the programming time per byte (the time during which the P bit is set in the

flash memory control register (FLMCR)). Does not include the program-verify time.

3. Indicates the time to erase all blocks (32 kB) (the time during which the E bit is set in

FLMCR). Does not include the prewrite time before erasing of the erase-verify time.

4. After powering on when using an external clock, when the programming voltage (VPP) is

switched from 12 V to VCC, an interval at least equal to the read setup time must be

allowed to elapse before reading the flash memory.

When VPP is released, this specifies the setup time from the point at which the VPP

voltage reaches the VCC + 2 V level until the flash memory is read.

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