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ICE40 Datasheet(PDF) 21 Page - Lattice Semiconductor |
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ICE40 Datasheet(HTML) 21 Page - Lattice Semiconductor |
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21 / 52 page ![]() iCE40 LP/HX Family Data Sheet © 2011-2018 Lattice Semiconductor Corp. All Lattice trademarks, registered trademarks, patents, and disclaimers are as listed at www.latticesemi.com/legal. All other brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice. FPGA-DS-02029-3.5 21 4.6. DC Electrical Characteristics Over recommended operating conditions. Table 4.5. DC Electrical Characteristics Symbol Parameter Condition Min Typ Max Unit IIL, IIH1, 3, 4, 5, 6, 7 Input or I/O Leakage 0 V < VIN < VCCIO + 0.2 V — — ±10 µA C16, 7 I/O Capacitance2 VCCIO = 3.3 V, 2.5 V, 1.8 V VCC = Typ, VIO = 0 to VCCIO + 0.2 V — 6 — pf C26, 7 Global Input Buffer Capacitance2 VCCIO = 3.3 V, 2.5 V, 1.8 V VCC = Typ, VIO = 0 to VCCIO + 0.2 V — 6 — pf VHYST Input Hysteresis VCCIO = 1.8 V, 2.5 V, 3.3 V — 200 — mV IPU6, 7 Internal PIO Pull-up VCCIO = 1.8 V, 0 ≤ VIN ≤ 0.65 * VCCIO −3 — −31 µA VCCIO = 2.5 V, 0 ≤ VIN ≤ 0.65 * VCCIO −8 — −72 µA VCCIO = 3.3 V, 0 ≤ VIN ≤ 0.65 * VCCIO −11 — −128 µA Notes: 1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured with the output driver active. Internal pull-up resistors are disabled. 2. TJ 25 oC, f = 1.0 MHz. 3. Refer to VIL and VIH in the sysI/O Single-Ended DC Electrical Characteristics table. 4. Only applies to I/Os in the SPI bank following configuration. 5. Some products are clamped to a diode when VIN is larger than VCCIO. 6. High current I/Os has three sysI/O buffers connected together. 7. The iCE40LP640 and iCE40LP1K SWG16 package has CDONE and a sysI/O buffer are connected together. 4.7. Static Supply Current – LP Devices Table 4.6. Supply Current– LP Devices1, 2, 3, 4 Symbol Parameter Device Typ VCC4 Unit ICC Core Power Supply iCE40LP384 21 µA iCE40LP640 100 µA iCE40LP1K 100 µA iCE40LP4K 250 µA iCE40LP8K 250 µA ICCPLL5, 6 PLL Power Supply All devices 0.5 µA IPP_2V5 NVCM Power Supply All devices 1.0 µA ICCIO, ICC_SPI Bank Power Supply4 VCCIO = 2.5 V All devices 3.5 µA Notes: 1. Assumes blank pattern with the following characteristics: all outputs are tri-stated, all inputs are configured as LVCMOS and held at VCCIO or GND, on-chip PLL is off. For more detail with your specific design, use the Power Calculator tool. Power specified with master SPI configuration mode. Other modes may be up to 25% higher. 2. Frequency = 0 MHz. 3. TJ = 25 °C, power supplies at nominal voltage. 4. Does not include pull-up. 5. No PLL available on the iCE40LP384 and iCE40LP640 device. 6. VCCPLL is tied to VCC internally in packages without PLL pins. |
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