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LTM4677 Datasheet(PDF) 7 Page - Analog Devices |
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LTM4677 Datasheet(HTML) 7 Page - Analog Devices |
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7 / 110 page  LTC3888-1 7 Rev. 0 For more information www.analog.com SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Difference Amplifiers DA_VOS Input Offset Voltage Referred to VSENSE+ l –16 16 mV DA_GE Gain Error Nominal Gain at DAOUT: 1.00 (Note 10) l –4 4 % DA_BW Unity-Gain Crossover Frequency RL = 40kΩ (Note 16) 25 MHz DA_IOUT Maximum Output Current Sourced, DAOUT = 3.45V l 325 µA DA_VMAX Maximum Output Voltage 3.45 V Input Voltage Supervisor NVON Input ON/OFF Resolution LSB Step Size 9 54.7 Bits mV VON_FS Full-Scale ON Threshold 28 V VON_TOL Input ON/OFF Threshold Accuracy VIN_ON ≥ 6.5V l –2 2 % Output Voltage Supervisors VUVOV_TOL Accuracy (Note 10) 0.5V ≤ VOUT < 1.0V (UV and OV) 1.0V ≤ VOUT ≤ 3.6V (UV and OV) l l –3 –2 3 2 % % Output Current Supervisors NILIMIT ISENSE Overcurrent Limit Resolution 7 Bits VOC_FS Full-Scale Threshold ISENSEn – IREF 500 mV VOC_TOL Accuracy ISENSEn – IREF ≥ 100mV l –6.5 6.5 % Gate Drive Voltage Supervisors IVDR_MON VDR_MON Input Current VDR_MON = 1.22V l –1 1 µA VDR_UV UV Threshold l 1.194 1.243 V ADC Readback Telemetry (Note 11) NVIN VIN Readback Resolution (Note 12) 10 Bits VIN_TUE VIN Total Unadjusted Readback Error VIN ≥ 4.5V l 1 % NVOUT VOUT Resolution LSB Step Size 16 130 Bits µV VOUT_TUE VOUT Total Unadjusted Readback Error Constant Load l –0.5 ±0.2 0.5 % % VOUT_OS VOUT Readback Offset Voltage ±300 µV NISENSE IOUT Readback Resolution (Note 12) 10 Bits ISENSE_TUE IOUT Total Unadjusted Readback Error ISENSEn – IREF ≥ 40mV l –1 1 % ISENSE_OS IOUT Readback Offset Voltage ±125 µV NTEMP Temperature Resolution (Note 12) 10 Bits TTUE Temperature Total Unadjusted Readback Error 0.24V ≤ TSNSn ≤ 1.8V (Note 13) l –1.5 1.5 °C tCONVERT Update Rate (Note 14) MFR_PWM_CONFIG_LTC3888-1[6] = 0 MFR_PWM_CONFIG_LTC3888-1[6] = 1 90 45 ms ms Internal EEPROM (Note 15) Endurance Number of Write Operations 0°C ≤ TJ ≤ 85°C During All Write Operations l 10,000 Cycles Retention Stored Data Retention TJ ≤ 125°C l 10 Years Mass Write Time STORE_USER_ALL Execution Duration 0°C ≤ TJ ≤ 85°C During All Write Operations l 0.2 2 s ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C (Notes 2, 8). VIN = 12V, VSENSEn+ = 1V, VSENSEn– = GND = 0V, fSYNC = 500kHz (externally driven) unless otherwise specified. |
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