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7477 Datasheet(PDF) 192 Page - Renesas Technology Corp |
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7477 Datasheet(HTML) 192 Page - Renesas Technology Corp |
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192 / 361 page ![]() 1-185 7470/7471/7477/7478 GROUP USER’S MANUAL HARDWARE 1.19 Built-in PROM version Reading Output disable Writing Writing verify Writing disable OE VIL VIH VIH VIL VIH VPP VCC VCC VPP VPP VPP VCC VCC RESET 0V D0 to D7 Output Floating Input Output Floating Pin Note: VIL denotes an “L” input voltage and VIH denotes an “H” input voltage. CE VIL VIL VIL VIH VIH Mode 1.19.3 Writing, reading, and erasing to built-in PROM The built-in PROM version is put into the EPROM mode by applying the “L” level to the RESET pin. Write, read and erase operations to the built-in PROM in the EPROM mode are described below. Table 1.19.6 shows input signals in each mode. (1) Reading q Apply 0 V to the RESET pin and 5 V to the VCC pin. q When an address signal (A0-A14) is input and the CE pin and the OE pin are caused to go “L”, the contents of the PROM appear to data I/O pins (D0-D7). q The data I/O pins (D0-D7) are put into a floating when either the CE pin or the OE pin is in the “H” state. (2) Writing q Apply 0 V to the RESET pin and 5 V to the VCC pin. q When the OE pin is caused to go to “H” and VPP is applied to the VPP pin, the program mode is provided. q Set an address to the address input pins (A0-A14) and give write data to the data I/O pins (D0-D7) in parallel. q In the above condition, a write operation is performed by causing the CE pin to go to “L”. When using a PROM programmer, specify an address into the following area. q Address 600016 to address 7FFF16 (for the M3747xE4) q Address 400016 to address 7FFF16 (for the M3747xE8) (3) Erasing q An erase operation is enabled only in the built-in EPROM version with window (M37471E8SS/ M37478E8SS). q Data can be erased by irradiating ultraviolet rays having a wave length of 2537Å. q The minimum amount of irradiation required for an erase operation is 15 W•s/cm2. Table 1.19.6 Input/Output signal on each mode |
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