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28F128 Datasheet(PDF) 54 Page - Intel Corporation

Part # 28F128
Description  3 Volt Intel StrataFlash Memory
PDF  58 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F128 Datasheet(HTML) 54 Page - Intel Corporation

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28F128J3A, 28F640J3A, 28F320J3A
48
Preliminary
6.7
Block Erase, Program, and Lock-Bit Configuration
Performance(1,2,3)
NOTES:
1. Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set.
Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (tWHQV1, tEHQV1) is 6.8 µs/byte (typical)
7. Effective per-word program time (tWHQV2, tEHQV2) is 13.6 µs/word (typical)
8. Max values are measured at worst case temperature and VCC corner after 100k cycles
#
Sym
Parameter
Notes
Typ
Max
Unit
W16
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
4,5,6,7
218
654
µs
W16
tWHQV3
tEHQV3
Byte Program Time (Using Word/Byte Program
Command)
4
210
630
µs
Block Program Time (Using Write to Buffer Command)
4
0.8
2.4
sec
W16
tWHQV4
tEHQV4
Block Erase Time
4
1.0
5.0
sec
W16
tWHQV5
tEHQV5
Set Lock-Bit Time
4
64
75
µs
W16
tWHQV6
tEHQV6
Clear Block Lock-Bits Time
4
0.5
0.70
sec
W16
tWHRH1
tEHRH1
Program Suspend Latency Time to Read
25
75
µs
W16
tWHRH
tEHRH
Erase Suspend Latency Time to Read
26
35
µs



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