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DP8500 Datasheet(PDF) 36 Page - National Semiconductor (TI) |
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DP8500 Datasheet(HTML) 36 Page - National Semiconductor (TI) |
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36 / 70 page ![]() 80 RAS and CAS Configuration Modes (Continued) 85 PAGEBURST MODE In a static column page or burst mode system the least significant bits must be tied to the column address in order to ensure that the pageburst accesses are to sequential memory addresses as shown in Figure 44 In a nibble mode system the two least significant address bits (A2 A3) must be tied to the highest row and column address inputs (de- pends on VRAM size) to ensure that the toggling bits of nibble mode VRAMs are to sequential memory addresses The ECAS inputs may then be toggled with the DP8520A 21A22A’s address latches in fall-through mode while AREQ is asserted The ECAS inputs can also be used to select individual bytes When using nibble mode VRAMS the third and fourth address bits can be tied to the bank select inputs to perform memory interleaving In page or static column modes the two address bits after the page size can be tied to the bank select inputs to select a new bank if the page size is exceeded TLF9338 – 95 See table below for row column bank address bit map A0A1 are used for byte addressing in this example Addresses Nibble Mode Page ModeStatic Column Mode Page Size 256 BitsPage 512 BitsPage 1024 BitsPage 2048 BitsPage Column R9 C9 e A2 A3 C0 – 7 e A2–9 C0–8 e A2–10 C0–9 e A2–11 C0–10 e A2–12 Address C0 – 8 e X C8–10 e X C910 e X C10 e X Row XX X X X Address B0 A4 A10 A11 A12 A13 B1 A5 A11 A12 A13 A14 Assuming 1 M-bit Vrams are being used Assume that the least significant address bits are used for byte addressing Given a 32-bit system A0A1 would be used for byte addressing X e DON’T CARE the user can do as he pleases FIGURE 44 Page Static Column Nibble Mode System 36 |
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