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CS47L35 Datasheet(PDF) 10 Page - Cirrus Logic |
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CS47L35 Datasheet(HTML) 10 Page - Cirrus Logic |
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10 / 300 page ![]() 10 DS1085F3 CS47L35 3 Characteristics and Specifications 3 Characteristics and Specifications Table 3-1 defines parameters as they are characterized in this section. Table 3-1. Parameter Definitions Parameter Definition Channel separation Left-to-right and right-to-left channel separation is the difference in level between the active channel (driven to maximum full scale output) and the measured signal level in the idle channel at the test signal frequency. The active channel is configured and supplied with an appropriate input signal to drive a full scale output, with signal measured at the output of the associated idle channel. Common-mode rejection ratio (CMRR) The ratio of a specified input signal (applied to both sides of a differential input), relative to the output signal that results from it. Dynamic range (DR) A measure of the difference between the maximum full scale output signal and the sum of all harmonic distortion products plus noise, with a low-level input signal applied. Typically, an input signal level 60 dB below full scale is used. Power-supply rejection ratio (PSRR) The ratio of a specified power supply variation relative to the output signal that results from it. PSRR is measured under quiescent signal path conditions. Signal-to-noise ratio (SNR) A measure of the difference in level between the maximum full scale output signal and the output with no input signal applied. Total harmonic distortion (THD) The ratio of the RMS sum of the harmonic distortion products in the specified bandwidth 1 relative to the RMS amplitude of the fundamental (i.e., test frequency) output. 1.All performance measurements are specified with a 20-kHz low-pass brick-wall filter and, where noted, an A-weighted filter. The low-pass filter removes out-of-band noise. Total harmonic distortion plus noise (THD+N) The ratio of the RMS sum of the harmonic distortion products plus noise in the specified bandwidth 1 relative to the RMS amplitude of the fundamental (i.e., test frequency) output. Table 3-2. Absolute Maximum Ratings Absolute maximum ratings are stress ratings only. Permanent damage to the device may be caused by continuously operating at or beyond these limits. Device functional operating limits and guaranteed performance specifications are given under electrical characteristics at the test conditions specified. Parameter Symbol Minimum Maximum Supply voltages DCVDD [1], FLLVDD [1] CPVDD1, CPVDD2 DBVDD1, DBVDD2, AVDD [2], MICVDD SPKVDD 1.The DCVDD and FLLVDD pins should be tied together. The associated power domain is referred to as DCVDD. 2.The AVDD1 and AVDD2 pins should be tied together. The associated power domain is referred to as AVDD. –0.3 V –0.3 V –0.3 V –0.3 V 1.6 V 2.5 V 5.0 V 6.0 V Voltage range digital inputs DBVDD1 domain DBVDD2 domain — — SUBGND – 0.3 V SUBGND – 0.3 V DBVDD1 + 0.3 V DBVDD2 + 0.3 V Voltage range analog inputs IN1Axx, IN2xx IN1Bxx HPOUTFBn 3 MICDETn 3 JACKDET1, HPDETL, HPDETR JACKDET2 [4], GPSWP, GPSWN 3.The HPOUTFBn and MICDETn functions share common pins. The absolute maximum rating varies according to the applicable function of each pin. 4.If AVDD > MICVDD (e.g., if LDO2 is disabled), the maximum JACKDET2 voltage is AVDD + 0.3 V. SUBGND – 0.3 V SUBGND – 0.9 V SUBGND – 0.3 V SUBGND – 0.3 V CP1VOUT2N – 0.3 V [5] SUBGND – 0.3 V 5.CP1VOUT2N is an internal supply, generated by the CS47L35 charge pump (CP1). Its voltage can vary between CPGND and –CPVDD1. MICVDD + 0.3 V MICVDD + 0.3 V SUBGND + 0.3 V MICVDD + 0.3 V AVDD + 0.3 V MICVDD + 0.3 V Ground AGND 6, DGND, CPGND, SPKGND 6.The AGND1 and AGND2 pins should be tied together. The associated ground domain is referred to as AGND. SUBGND – 0.3 V SUBGND + 0.3 V Operating temperature range TA –40ºC +85ºC Operating junction temperature TJ –40ºC +125ºC Storage temperature after soldering — –65ºC +150ºC ESD-sensitive device. The CS47L35 is manufactured on a CMOS process. It is therefore generically susceptible to damage from excessive static voltages. Proper ESD precautions must be taken during handling and storage of this device. This device is qualified to current JEDEC ESD standards. |
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