VNF1248F datasheet(6/79 Pages) STMICROELECTRONICS

6 / 79 page

Symbol

Parameter

Value

Unit

Tstg

°C

Storage temperature

-55 to 150

NFTP

Maximum number of few time programmable non-volatile memory (FTP NVM)

programming cycles

1000

1. Only for pin: VS, OUT, DIN.

2. All pins except corners.

3. Corner pins.

2.2

Thermal data

Table 3. Thermal data

Symbol

Parameter

Typ. value

Unit

RthJA

Thermal resistance, junction-to-ambient (JEDEC JESD 51-2, -7)(1)

°C/W

Thermal resistance, junction-to-ambient (JEDEC JESD 51-2, -5)(2)

1. Device mounted on two-layer 2s0p PCB with 2 cm² heatsink copper trace.

2. Device mounted on four-layer 2s2p PCB.

Note:

Board finish thickness 1.6 mm ±10%; Board double layer and four layers; board dimension 129x60; board

material FR4; Cu thickness 0.070 mm (outer layers), Cu thickness 0.035 mm (inner layers); Thermal vias

separation 1.2 mm, Thermal vias diameter 0.3 mm ±0.08 mm, Cu thickness on vias 0.025 mm; footprint

dimension 3.5 mm x 3.5 mm.

2.3

Main electrical characteristics

6 V < VS < 60 V; -40 °C < TJ < 150 °C, unless otherwise specified.

All typical values refer to VS = 48 V; TJ = 25 °C, unless otherwise specified.

Table 4. Supply specification

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Operating supply voltage

VS_EXT

Extended operating supply voltage

100 ms max. duration

VEXT_LDO_L

Low level voltage EXT_LDO

2.6

2.8

VEXT_LDO_H

High level voltage EXT_LDO

2.8

3.2

IEXT_LDO_H

Current consumption from EXT_LDO in

supplier mode

VEXT_LDO > VEXT_LDO_H

3.5

IEXT_LDO_L

Current consumption from EXT_LDO

VEXT_LDO < VEXT_LDO_L

μA

VS_USD1

Undervoltage shutdown(1)

3.8

4.2

VS_USD2

VS_USD3

VS_USD_RES1

Undervoltage shutdown reset

4.3

4.5

4.8

VS_USD_RES2

VS_USD_RES3

VS_USD_HYS1

Undervoltage shutdown hysteresis

0.5

VS_USD_HYS2

Undervoltage shutdown hysteresis

VS_USD_HYS3

Undervoltage shutdown hysteresis

VNF1248F

Electrical specification

DS14109 - Rev 7

page 6/79

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