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DS0128 Datasheet(PDF) 48 Page - Microsemi Corporation

Part # DS0128
Description  IGLOO2 FPGA and SmartFusion2 SoC FPGA
PDF  140 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

DS0128 Datasheet(HTML) 48 Page - Microsemi Corporation

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IGLOO2 FPGA and SmartFusion2 SoC FPGA
Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0
38
Note: For a detailed I/V curve, use the corresponding IBIS models:
www.microsemi.com/soc/download/ibis/default.aspx.
AC Switching Characteristics
Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 1.14 V
Table 77 •
LVCMOS 1.2 V AC Calibrated Impedance Option
Parameter
Symbol
Typ
Unit
Supported output driver calibrated
impedance (for DDRIO I/O bank)
RODT_CAL
75, 60, 50, 40
Table 78 •
LVCMOS 1.2 V AC Test Parameter Specifications
Parameter
Symbol
Typ
Unit
Measuring/trip point
VTRIP
0.6
V
Resistance for enable path (TZH, TZL, THZ, TLZ)RENT
2K
Capacitive loading for enable path (TZH, TZL, THZ, TLZ)
CENT
5pF
Capacitive loading for data path (TDP)CLOAD
5pF
Table 79 •
LVCMOS 1.2 V Transmitter Drive Strength Specifications
Output Drive Selection
VOH (V)
VOL (V)
IOH (at VOH)
mA
IOL (at VOL)
mA
MSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank
Min
Max
2 mA
2 mA
2 mA
VDDI × 0.75 VDDI × 0.25 2
2
4 mA
4 mA
4 mA
VDDI × 0.75 VDDI × 0.25 4
4
6 mA
VDDI × 0.75 VDDI × 0.25 6
6
Table 80 •
LVCMOS 1.2 V Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input
Buffers)
On-Die Termination (ODT)
TPY
TPYS
Unit
–1
–Std
–1
–Std
None
2.448
2.88
2.466
2.901
ns
Table 81 •
LVCMOS 1.2 V Receiver Characteristics for MSIO I/O Bank (Input Buffers)
On-Die Termination ODT)
TPY
TPYS
Unit
–1
–Std
–1
–Std
None
4.714
5.545
4.675
5.5
ns
50
6.668
7.845
6.579
7.74
ns
75
5.832
6.862
5.76
6.777
ns
150
5.162
6.073
5.111
6.014
ns



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