33910 datasheet(18/90 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33910

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

MC33910G5AC/MC3433910G5AC

LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0KBIT/SEC ACCORDING TO LIN PHYSICAL

LAYER SPECIFICATION(48), (49)

Duty Cycle 1:

THREC(MAX) = 0.744 * VSUP

THDOM(MAX) = 0.581 * VSUP

D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs, 7.0 V ≤ VSUP ≤ 18 V

0.396

—

Duty Cycle 2:

THREC(MIN) = 0.422 * VSUP

THDOM(MIN) = 0.284 * VSUP

D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs, 7.6 V ≤ VSUP ≤ 18 V

—

0.581

LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER

SPECIFICATION(48), (50)

Duty Cycle 3:

THREC(MAX) = 0.778 * VSUP

THDOM(MAX) = 0.616 * VSUP

D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs, 7.0 V ≤ VSUP ≤ 18 V

0.417

—

Duty Cycle 4:

THREC(MIN) = 0.389 * VSUP

THDOM(MIN) = 0.251 * VSUP

D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs, 7.6 V ≤ VSUP ≤ 18 V

—

0.590

Notes

48.

Bus load RBUS and CBUS 1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. Measurement thresholds: 50% of TXD signal to LIN signal

threshold defined at each parameter. See Figure 6.

49.

See Figure 7.

50.

See Figure 8.

Table 5. Dynamic Electrical Characteristics (continued)

Characteristics noted under conditions 5.5 V

≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C for the 33910 and -40°C ≤ TA ≤ 85°C for the

34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal

conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

33910 Datasheet(PDF) 18 Page - Freescale Semiconductor, Inc

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