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TDA2EX Datasheet(PDF) 128 Page - Texas Instruments |
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TDA2EX Datasheet(HTML) 128 Page - Texas Instruments |
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128 / 391 page  128 TDA2EG-17 SPRS969B – AUGUST 2016 – REVISED JUNE 2017 www.ti.com Submit Documentation Feedback Product Folder Links: TDA2EG-17 Specifications Copyright © 2016–2017, Texas Instruments Incorporated Table 5-7. Dual Voltage LVCMOS I2C DC Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER MIN NOM MAX UNIT VOL3 Output low-level threshold open-drain at 3-mA sink current 0.2 × VDDS V IOLmin Low-level output current @VOL=0.2 × VDDS 3 mA tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 10 pF to 400 pF 20+0.1 × Cb 250 ns I2C Standard Mode – 3.3 V VIH Input high-level threshold 0.7 × VDDS V VIL Input low-level threshold 0.3 × VDDS V Vhys Hysteresis 0.05 × VDDS V IIN Input current at each I/O pin with an input voltage between 0.1 × VDDS to 0.9 × VDDS 31 80 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 31 80 µA CIN Input capacitance 10 pF VOL3 Output low-level threshold open-drain at 3-mA sink current 0.4 V IOLmin Low-level output current @VOL=0.4V 3 mA IOLmin Low-level output current @VOL=0.6V for full drive load (400pF/400KHz) 6 mA tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 5 pF to 400 pF 250 ns I2C Fast Mode – 3.3 V VIH Input high-level threshold 0.7 × VDDS V VIL Input low-level threshold 0.3 × VDDS V Vhys Hysteresis 0.05 × VDDS V IIN Input current at each I/O pin with an input voltage between 0.1 × VDDS to 0.9 × VDDSS 31 80 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 31 80 µA CIN Input capacitance 10 pF VOL3 Output low-level threshold open-drain at 3-mA sink current 0.4 V IOLmin Low-level output current @VOL=0.4V 3 mA IOLmin Low-level output current @VOL=0.6V for full drive load (400pF/400KHz) 6 mA tOF Output fall time from VIHmin to VILmax with a bus capacitance CB from 10 pF to 200 pF (Proper External Resistor Value should be used as per I2C spec) 20+0.1 × Cb 250 ns Output fall time from VIHmin to VILmax with a bus capacitance CB from 300 pF to 400 pF (Proper External Resistor Value should be used as per I2C spec) 40 290 (1) VDDS in this table stands for corresponding power supply (i.e. vddshv3). For more information on the power supply name and the corresponding ball, see Table 4-1, POWER [10] column. (2) For more information on the I/O cell configurations, see the Control Module section of the Device TRM. |
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