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ESP32-P4 Datasheet(PDF) 83 Page - ESPRESSIF SYSTEMS (SHANGHAI) CO., LTD. |
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ESP32-P4 Datasheet(HTML) 83 Page - ESPRESSIF SYSTEMS (SHANGHAI) CO., LTD. |
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83 / 93 page ![]() 5 Electrical Characteristics Table 5-2 – cont’d from previous page Parameter Description Min Typ Max Unit VDD_HP_0,VDD_HP_1, VDD_HP_2, VDD_HP_3 1 Recommended input voltage 0.99 1.1 1.3 V VDD_MIPI_DPHY Recommended input voltage 2.25 2.5 2.75 V VDD_USBPHY Recommended input voltage 2.97 3.3 3.63 V IV DD Current supplied to core 0.5 — — A TA Ambient temperature –40 — 85 °C 1 The chip can automatically adjust the input voltage of VDD_HP_x based on the situation. 5.3 VDDO_FLASH Output Characteristics Table 5-3. VDDO_FLASH Internal and Output Characteristics Parameter Description Typ Unit RV F B VDDO_FLASH powered by VDD_LDO via RV F B for 3.3 V flash 1 3 Ω IV F B Output current when VDDO_FLASH is pow- ered by Flash Voltage Regulator for 1.8 V flash 50 mA 1 See in conjunction with Section 2.6.2 Power Scheme. 1 VDD_LDO must be more than VDD_flash_min + I_flash_max × RV F B; where • VDD_flash_min – minimum operating voltage of flash • I_flash_max – maximum operating current of flash 5.4 DC Characteristics (3.3 V, 25 °C) Table 5-4. DC Characteristics (3.3 V, 25 °C) Parameter Description Min Typ Max Unit CIN Pin capacitance — 2 — pF VIH High-level input voltage 0.75 × VDD1 — VDD1 + 0.3 V VIL Low-level input voltage –0.3 — 0.25 × VDD1 V IIH High-level input current — — 50 nA IIL Low-level input current — — 50 nA VOH 2 High-level output voltage 0.8 × VDD1 — — V VOL2 Low-level output voltage — — 0.1 × VDD1 V IOH High-level source current (VDD1 = 3.3 V, VOH >= 2.64 V, PAD_DRIVER = 3) — 40 — mA IOL Low-level sink current (VDD1 = 3.3 V, VOL = 0.495 V, PAD_DRIVER = 3) — 28 — mA RP U Pull-up resistor — 45 — kΩ Espressif Systems 83 Submit Documentation Feedback ESP32-P4 Series Datasheet v0.5 |
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