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TMS28F033 Datasheet(PDF) 34 Page - Texas Instruments

Part # TMS28F033
Description  4194304-BIT SYNCHRONOUS FLASH MEMORY
PDF  52 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F033 Datasheet(HTML) 34 Page - Texas Instruments

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TMS28F033
4194304-BIT
SYNCHRONOUS FLASH MEMORY
SMJS833 – NOVEMBER 1997
34
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
timing requirements over recommended ranges of supply voltage and ambient temperature range,
asynchronous write/erase operations (see Figure 23 and Figure 26)
3.3-V VDDE
RANGE
5-V VDDE
RANGE
UNITS
MIN
MAX
MIN
MAX
tWHWH
Cycle time, write
TBD
TBD
ns
tWHAX
Hold time, address from WE high
TBD
TBD
ns
tYHVL
Hold time, VPP from RY/BY high
0
0
ns
tWHEH
Hold time, E from WE high
TBD
TBD
ns
tAVWH
Setup time, address to WE high
TBD
TBD
ns
tELWL
Setup time, E to WE low
TBD
TBD
ns
tVHWH
Setup time, VPP to WE high
TBD
TBD
ns
tWL
Pulse duration, WE low
TBD
TBD
ns
tWH
Pulse duration, WE high
TBD
TBD
ns
tDVWH
Data valid to WE high
TBD
TBD
ns
tWHDX
WE high to data invalid
TBD
TBD
ns
tWHYH1
Duration of double-word/word operation
TBD
TBD
ns
tWHYH2
Duration of double-word/word operation in low-power programming (LPP) mode
TBD
TBD
ns
tWHYH3
Duration of block-erase operation
TBD
TBD
ns
tWHYH4
Duration of block-erase operation in LPP mode
TBD
TBD
ns
tWHYL
WE high to RY/BY low
TBD
TBD
ns
VDDI power-up and reset/power-down (RP) characteristics over recommended ranges of supply
voltage and ambient temperature range (see Figure 12)
PARAMETER
MIN
MAX
UNITS
t5HPH
Power (VDDI) applied to RP high
1
ms
tPHCH
RP high to LBA/CLK high
200
ns
tPL5L
RP low to power (VDDI) low
0
ns
t5HVH
VDDI high to VPP high
500
ns
tVHPH
VPP high to RP high
100
ns



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