TMS28F033 datasheet(31/52 Pages) TI

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TMS28F033

4194304-BIT

SYNCHRONOUS FLASH MEMORY

SMJS833 – NOVEMBER 1997

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251–1443

PARAMETER MEASUREMENT INFORMATION

IOL

IOH

Output

Under

Test

(see Note A)

VIH

VIL

VOL

VOH

Voltage Waveforms

NOTES: A. CL includes probe and fixture capacitance.

B. AC test conditions are driven at VIH and VIL. Timing measurements are made at VOH and VOL levels on both inputs and outputs.

Refer to Table 16 for values based on VDDE operating range.

Figure 10. Load Circuit and Voltage Waveforms

Table 15. AC Test Conditions

VDDE RANGE

IOL

(mA)

IOH

(mA)

VZ†

(V)

VOL

(V)

VOH

(V)

VIL

(V)

VIH

(V)

(pF)

(ns)

5 V

± 10%

1.0

–1.0

1.4

0.8

2.0

0.45

2.4

< 5

3.3 V

± 0.3V

1.0

–1.0

1.4

0.8

2.0

0.45

2.4

< 5

† VZ is the measured value used to detect the high-impedance state.

Table 16. Timing Nomenclature

SYMBOL

PIN CHARACTERS

SYMBOL

PIN CONDITION

Address Inputs

High

Clock (CLK)

Low

Data Inputs

Not valid

Data Outputs

High impedance

E (Chip Enable)

Valid

OE (Output Enable)

Driven

WE (Write Enable)

RP (Reset/Power-Down)

RY/BY (Ready/Busy)

LBA (Load Burst Address)

BAA (Burst Address Advance)

DIS (Disable Output)

WR (Write)

VPP (Write/Erase Power Supply)

VDDI (Internal Power Supply)

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