TMS28F033 datasheet(28/52 Pages) TI

28 / 52 page

TMS28F033

4194304-BIT

SYNCHRONOUS FLASH MEMORY

SMJS833 – NOVEMBER 1997

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251–1443

absolute maximum ratings over ambient temperature range (unless otherwise noted)†

Supply voltage range, VDDI (5 V) (see Note 17)

–0.5 V to 7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Supply voltage range, VDDE (3.3 V) (see Note 17)

–0.5 V to 4.6 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, VI (except VPP)

–0.5 V to VDDE + 0.5 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, VI (VPP)

–0.5 V to 14 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Biased junction Temperature, TJ

150

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Ambient temperature, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(L)

0 V to 70

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(E)

–40 V to 85

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(Q)

–40 V to 125

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, Tstg

–55

_C to 150_C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Soldering temperature, TSO (IR reflow for 180 seconds)

225

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Soldering temperature (maximum ramp rate)

_C/s

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal resistance, QJA (junction-to-ambient)

_C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Data retention (at 55

_C ambient)

20 Years (minimum)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Number of erase/write cycles

10 000 Cycles

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 17: All voltage values are with respect to VSS.

recommended operating conditions

MIN

NOM

MAX

UNIT

VDDI

Supply voltage

4.5

5.5

VDDE Output buffer supply voltage

3/5IO = VIH

3.0

3.3

3.6

VDDE Output buffer supply voltage

3/5IO = VIL

4.5

5.0

5.5

VIL

Input low voltage

–0.3

0.8

VIH

Input high voltage

2.0

VDDE + 0.3

VPP

Programming supply voltage

11.4

12.6

VPPL

Programming voltage low

VPPH

Programming voltage high

11.4

L Suffix

°C

Ambient temperature during read/erase/program

E Suffix

–40

°C

Q Suffix

–40

125

°C

TMS28F033 Datasheet(PDF) 28 Page - Texas Instruments

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