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TMS28F033 Datasheet(PDF) 30 Page - Texas Instruments

Part # TMS28F033
Description  4194304-BIT SYNCHRONOUS FLASH MEMORY
PDF  52 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F033 Datasheet(HTML) 30 Page - Texas Instruments

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TMS28F033
4194304-BIT
SYNCHRONOUS FLASH MEMORY
SMJS833 – NOVEMBER 1997
30
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and ambient temperature,
VDDE = 5 V (see Notes 20, 21, 23, and 24)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VOL†
Output low voltage
VDDI/VDDE = MIN, IOL = TBD
0.2
V
VOH†
Output high voltage
VDDI/VDDE = MIN, IOH = TBD
VDDE – 0.2
V
IDDI_pwdn
IDDI power-down current
VDDI/VDDE = MAX, RP= VIL
TBD
mA
ILI
Input leakage
VIN = GND to VDDE MAX,
VDDI = VDDI MAX
± 5
mA
ILO
Output leakage
V0 = GND to VDDE MAX,
DIS = VIL , VDDI = VDDI MAX
± 10
mA
IPU
Internal pullup current
(DIS, RP, LRV pins)
(VDDI/VDDE = MIN, VPIN = 2.0 V) or
(VDDI/VDDE = MAX, VPIN = 0 V)
TBD
TBD
mA
IDDI
Supply current, internal
VDDI/VDDE = MAX, OE = VIL,
at 25 MHz
100
mA
IDDE
Supply current, external
VDDI/VDDE = MAX, OE = VIL,
at 25 MHz, MOD4, x32
TBD
mA
IPPS
Supply current, for slow programming (low-power
programming mode)
VDDI/VPP/VDDE = MAX
50
mA
IERSS
Supply current, for slow erasing (low-power
programming mode)
VDDI/VPP/VDDE = MAX
50
mA
IPPF
Supply current, for fast programming
VDDI/VPP/VDDE = MAX
120
mA
IERSF
Supply current, for fast erasing
VDDI/VPP/VDDE = MAX
120
mA
† Dependent on JEDEC standard 8–1A.
NOTES: 20. Test results of erasing and programming with VPPL < VPP < VPPH are undefined.
21. Positive current flow is into the device.
23. Device in read mode with OE enabled.
24. Test supply voltage range: ( 4.5-V dc
≤ VDDI ≤ 5.5-V dc ) and ( 4.5-V dc ≤ VDDE ≤ 5.5-V dc ).
capacitance
over recommended ranges of supply voltage and ambient temperature,
f = 1 MHz, VI = 0 V
PARAMETER
TEST CONDITION
MIN
MAX
UNIT
Ci
Input capacitance
8
pF
Co
Output capacitance
VO = 0 V
12
pF



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