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TMS28F033 Datasheet(PDF) 30 Page - Texas Instruments |
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TMS28F033 Datasheet(HTML) 30 Page - Texas Instruments |
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30 / 52 page ![]() TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY SMJS833 – NOVEMBER 1997 30 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 electrical characteristics over recommended ranges of supply voltage and ambient temperature, VDDE = 5 V (see Notes 20, 21, 23, and 24) PARAMETER TEST CONDITIONS MIN MAX UNIT VOL† Output low voltage VDDI/VDDE = MIN, IOL = TBD 0.2 V VOH† Output high voltage VDDI/VDDE = MIN, IOH = TBD VDDE – 0.2 V IDDI_pwdn IDDI power-down current VDDI/VDDE = MAX, RP= VIL TBD mA ILI Input leakage VIN = GND to VDDE MAX, VDDI = VDDI MAX ± 5 mA ILO Output leakage V0 = GND to VDDE MAX, DIS = VIL , VDDI = VDDI MAX ± 10 mA IPU Internal pullup current (DIS, RP, LRV pins) (VDDI/VDDE = MIN, VPIN = 2.0 V) or (VDDI/VDDE = MAX, VPIN = 0 V) TBD TBD mA IDDI Supply current, internal VDDI/VDDE = MAX, OE = VIL, at 25 MHz 100 mA IDDE Supply current, external VDDI/VDDE = MAX, OE = VIL, at 25 MHz, MOD4, x32 TBD mA IPPS Supply current, for slow programming (low-power programming mode) VDDI/VPP/VDDE = MAX 50 mA IERSS Supply current, for slow erasing (low-power programming mode) VDDI/VPP/VDDE = MAX 50 mA IPPF Supply current, for fast programming VDDI/VPP/VDDE = MAX 120 mA IERSF Supply current, for fast erasing VDDI/VPP/VDDE = MAX 120 mA † Dependent on JEDEC standard 8–1A. NOTES: 20. Test results of erasing and programming with VPPL < VPP < VPPH are undefined. 21. Positive current flow is into the device. 23. Device in read mode with OE enabled. 24. Test supply voltage range: ( 4.5-V dc ≤ VDDI ≤ 5.5-V dc ) and ( 4.5-V dc ≤ VDDE ≤ 5.5-V dc ). capacitance over recommended ranges of supply voltage and ambient temperature, f = 1 MHz, VI = 0 V PARAMETER TEST CONDITION MIN MAX UNIT Ci Input capacitance 8 pF Co Output capacitance VO = 0 V 12 pF |
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