TMS28F033 datasheet(44/52 Pages) TI

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D15

D14

D13

D12

A0–A16

(double-word-

wide)

LBA

BAA

DIS

DQ0–DQ31

(double-word-

wide)

RY/BY

VDDI/VDDE

CLK

tCHSH

tSLCH

BASIC/ENHANCED

PIN SET

DCR0

MODE

DCR1

MODE

DCR2

DIS/WORD

DCR3

LRV/BAA

DCR4

BURST

LENGTH

DCR25,24

BURST

LATENCY (X)

DCR29,28

BURST

LATENCY (Y)

DCR30

x16 WRITE

OPTION

DCR31

Basic pin set (DCR0 = 0)

(see Note D)

(see Note E)

(see Note F)

(see Note G)

Enhanced pin set (DCR0 = 1)

(see Note D)

(see Note E)

(see Note F)

(see Note G)

NOTES: A. X is a don’t care.

B. See Table 8 through Table 12 for DCR setting descriptions.

C. Linear burst with the enhanced pin set requires LBO=VIL.

D. DIS requires DCR3 =0, available only with the 32-bit data bus.

E. For synchronous OE (DCR1 =0), BAA is not required to burst if OE is used to control the burst (DCR[29:28] = 00).

F. 3–1– . . . –1 is available with MOD4 (see Figure 14), MOD8, MOD16, and MOD32.

G. Linear MOD16 burst is available with 3–1– . . . –1, 4–1– . . . –1, 5–1– . . . –1, and 4–2– ...–2.

Figure 21. DIS Usage on 3–1–...–1 MOD16 Linear Burst With Device Configuration Register Settings

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