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TMS28F033 Datasheet(PDF) 29 Page - Texas Instruments

Part # TMS28F033
Description  4194304-BIT SYNCHRONOUS FLASH MEMORY
PDF  52 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F033 Datasheet(HTML) 29 Page - Texas Instruments

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TMS28F033
4194304-BIT
SYNCHRONOUS FLASH MEMORY
SMJS833 – NOVEMBER 1997
29
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
double-word/word typical write and block-erase duration (see Notes 18 and 19)
BLOCK
ERASE
OPERATION
WRITE OPERATION
SIZE
ERASE
LPP
MODE
PROGRAMMING
LOW-POWER PROGRAMMING
MODE
UNIT
x32 / x16
x16 or x32
x16 or x32
x32
x16
x32
x16
x32 / x16
x16 or x32
x16 or x32
x32
2-CYCLE
3-CYCLE
x32
2-CYCLE
3-CYCLE
6K / 12K
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
s
16K / 32K
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
s
32K / 64K
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
s
48K / 96K
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
s
80K / 160K
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
s
NOTES: 18. Excludes system-level overhead
19. Typical values shown are at TA = 25°C
electrical characteristics over recommended ranges of supply voltage and ambient temperature,
VDDE = 3.3 V (see Notes 20 through 23)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VOL†
Output low voltage
VDDI/VDDE = MIN, IOL = 100 mA
0.2
V
VOH†
Output high voltage
VDDI/VDDE = MIN, IOH = –100 mA
VDDE–0.2
V
IDDI_pwdn
IDDI power-down current
VDDI/VDDE = MAX, RP= VIL
TBD
mA
ILI
Input leakage
VIN = GND to VDDE MAX,
VDDI = VDDI MAX
± 5
mA
ILO
Output leakage
V0 = GND to VDDE MAX,
DIS = VIL , VDDI = VDDI MAX
± 10
mA
IPU
Internal pullup current (DIS, RP, LRV pins)
(VDDI/VDDE = MIN, VPIN = 2.0 V) or
(VDDI/VDDE = MAX, VPIN = 0 V)
20
600
mA
IDDI
Supply current, internal
VDDI/VDDE = MAX, OE = VIL,
at 25 MHz
100
mA
IDDE
Supply current, external
VDDI/VDDE = MAX, OE = VIL,
at 25 MHz, MOD4, x32
65
mA
IPPS
Supply current, for slow programming (low-power
programming mode)
VDDI/VPP/VDDE = MAX
50
mA
IERSS
Supply current, for slow erasing (low-power
programming mode)
VDDI/VPP/VDDE = MAX
50
mA
IPPF
Supply current, for fast programming
VDDI/VPP/VDDE = MAX
120
mA
IERSF
Supply current, for fast erasing
VDDI/VPP/VDDE = MAX
120
mA
† Dependent on JEDEC standard 8–1A.
NOTES: 20. Test results of erasing and programming with VPPL < VPP < VPPH are undefined.
21. Positive current flow is into the device.
22. Test supply voltage range: (4.5-V dc
≤ VDDI ≤ 5.5-V dc) and (3-V dc ≤ VDDE ≤ 3.6-V dc).
23. Device in read mode with OE enabled.



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