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TMPR3911 Datasheet(PDF) 128 Page - Toshiba Semiconductor |
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TMPR3911 Datasheet(HTML) 128 Page - Toshiba Semiconductor |
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128 / 462 page ![]() Chapter 4 BIU Module 4-28 ENBANKxOPT = 1 ENBANKxHDRAM = 0 Figure 4.4.4 Write with ENBANKOPT Set followed by Refresh Cycle (DRAM) (2) DRAM Initialization When the DRAM is first powered up there are several things that must be done before accessing the DRAM. First the Memory Configuration Registers must be properly configured for the chosen DRAM and bus configuration. Next, after a delay of at least 100 µs after the power is asserted to the DRAM, the refresh should be enabled. The DRAM should not be accessed until at least eight CAS* before RAS* refresh cycles occur. After this procedure is completed the DRAM can be accessed. DCLKOUT A[12:0] D[31:0] RAS* CAS* WE* ROW COL |
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