| Electronic Components Datasheet Search |
|
TMPR3911 Datasheet(PDF) 134 Page - Toshiba Semiconductor |
|
|
|||||||||||||||||||||||||||||
TMPR3911 Datasheet(HTML) 134 Page - Toshiba Semiconductor |
|
134 / 462 page ![]() Chapter 4 BIU Module 4-34 Figure 4.5.1 Memory Interface Wake-Up Figure 4.5.2 Memory Interface Power Down When the memory interface is powered down all memory signals are driven low. The order in which they are driven low is important because DRAM devices enter self refresh mode by asserting CAS* before RAS*, and SDRAM devices enter self refresh mode by de-asserting DCKE while DCS0* and/or RAS1*, RAS0* and CAS0* are asserted with WE* not asserted. Once the SDRAM enters self refresh mode, DCLKOUT can be turned off. The ordering makes it possible to put both DRAM and SDRAM devices into self refresh mode with only one time setting required. When the memory interface comes out of self refresh mode, all signals are de-asserted. DCKE must de-assert one clock later in order to properly bring the SDRAM out of self refresh mode. After exiting self refresh mode, the Halt signal will not be released for several clocks to allow the DRAM and SDRAM to finish exiting self refresh mode. DCLKOUT A[12:0] D[31:0] DCS0* RAS1* RAS0* CAS3-0* WE* DQMH/L DCKE DCLKOUT A[12:0] D[31:0] DCS0* RAS1* RAS0* CAS3-0* WE* DQMH/L DCKE |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |