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HD64F36049 Datasheet(PDF) 471 Page - Renesas Technology Corp |
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HD64F36049 Datasheet(HTML) 471 Page - Renesas Technology Corp |
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471 / 562 page  Section 23 Electrical Characteristics Rev. 3.00 Mar. 15, 2006 Page 439 of 526 REJ09B0060-0300 23.2.6 Flash Memory Characteristics Table 23.8 Flash Memory Characteristics V CC = 3.0 to 5.5 V, VSS = 0.0 V, Ta = –20 to +75°C, unless otherwise indicated. Test Values Item Symbol Condition Min. Typ. Max. Unit Programming time (per 128 bytes)* 1*2*4 t P 7 ms Erase time (per block) * 1*3*6 t E 100 ms Reprogramming count N WEC 1000 10000 Times Programming Wait time after SWE bit setting* 1 x 1 µs Wait time after PSU bit setting* 1 y 50 µs Wait time after P bit setting* 1*4 z1 1 ≤ n ≤ 6 28 30 32 µs z2 7 ≤ n ≤ 1000 198 200 202 µs z3 Additional- programming 8 10 12 µs Wait time after P bit clear* 1 α 5 µs Wait time after PSU bit clear* 1 β 5 µs Wait time after PV bit setting* 1 γ 4 µs Wait time after dummy write* 1 ε 2 µs Wait time after PV bit clear* 1 η 2 µs Wait time after SWE bit clear* 1 θ 100 µs Maximum programming count * 1*4*5 N 1000 Times |
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