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HD64F36049 Datasheet(PDF) 472 Page - Renesas Technology Corp |
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HD64F36049 Datasheet(HTML) 472 Page - Renesas Technology Corp |
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472 / 562 page ![]() Section 23 Electrical Characteristics Rev. 3.00 Mar. 15, 2006 Page 440 of 526 REJ09B0060-0300 Test Values Item Symbol Condition Min. Typ. Max. Unit Erasing Wait time after SWE bit setting* 1 x 1 µs Wait time after ESU bit setting* 1 y 100 µs Wait time after E bit setting* 1*6 z 10 100 ms Wait time after E bit clear* 1 α 10 µs Wait time after ESU bit clear* 1 β 10 µs Wait time after EV bit setting* 1 γ 20 µs Wait time after dummy write* 1 ε 2 µs Wait time after EV bit clear* 1 η 4 µs Wait time after SWE bit clear* 1 θ 100 µs Maximum erase count * 1*6*7 N 120 Times Notes: 1. Make the time settings in accordance with the program/erase algorithms. 2. The programming time for 128 bytes. (Indicates the total time for which the P bit in the flash memory control register 1 (FLMCR1) is set. The program-verify time is not included.) 3. The time required to erase one block. (Indicates the time for which the E bit in the flash memory control register 1 (FLMCR1) is set. The erase-verify time is not included.) 4. Maximum programming time (t P (max.)) = wait time after P bit setting (z) × maximum programming count (N) 5. Set the maximum programming count (N) according to the actual set values of z1, z2, and z3, so that it does not exceed the maximum programming time (t P (max.)). The wait time after P bit setting (z1, z2) should be changed as follows according to the value of the programming count (n). Programming count (n) 1 ≤ n ≤ 6 z1 = 30 µs 7 ≤ n ≤ 1000 z2 = 200 µs 6. Maximum erase time (t E (max.)) = wait time after E bit setting (z) × maximum erase count (N) 7. Set the maximum erase count (N) according to the actual set value of (z), so that it does not exceed the maximum erase time (t E (max.)). |
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