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HD64F36049 Datasheet(PDF) 472 Page - Renesas Technology Corp

Part # HD64F36049
Description  Renesas 16-Bit Single-Chip Microcomputer H8 Family / H8/300H Tiny Series
PDF  562 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HD64F36049 Datasheet(HTML) 472 Page - Renesas Technology Corp

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Section 23 Electrical Characteristics
Rev. 3.00 Mar. 15, 2006 Page 440 of 526
REJ09B0060-0300
Test
Values
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Erasing
Wait time after SWE
bit setting*
1
x
1
µs
Wait time after ESU
bit setting*
1
y
100
µs
Wait time after E bit setting*
1*6 z
10
100
ms
Wait time after E bit clear*
1
α
10
µs
Wait time after ESU bit clear*
1
β
10
µs
Wait time after EV bit setting*
1
γ
20
µs
Wait time after dummy write*
1
ε
2
µs
Wait time after EV bit clear*
1
η
4
µs
Wait time after SWE bit clear*
1
θ
100
µs
Maximum erase count *
1*6*7
N
120
Times
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in the
flash memory control register 1 (FLMCR1) is set. The program-verify time is not
included.)
3. The time required to erase one block. (Indicates the time for which the E bit in the flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4. Maximum programming time (t
P (max.)) = wait time after P bit setting (z) × maximum
programming count (N)
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
and z3, so that it does not exceed the maximum programming time (t
P (max.)). The wait
time after P bit setting (z1, z2) should be changed as follows according to the value of
the programming count (n).
Programming count (n)
1
≤ n ≤ 6
z1 = 30 µs
7
≤ n ≤ 1000 z2 = 200 µs
6. Maximum erase time (t
E (max.)) = wait time after E bit setting (z) × maximum erase
count (N)
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
does not exceed the maximum erase time (t
E (max.)).



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