32182 datasheet(160/755 Pages) RENESAS

160 / 755 page

6-25

INTERNAL MEMORY

32182 Group User’s Manual (Rev.1.0)

END

Read any address of the internal flash

memory (Note 2) to check for erase

error (see Figure 6.4.2)

START

Write the Verify command (H'D0D0) to

the last even address of the flash

memory block to be erased

Write the Block Erase command

(H'2020) to any address of the

internal flash memory

Internal flash memory contents

are erased by the Block Erase

command (Note 1)

Wait for 1 µs

(using a hardware or software timer)

FSTAT bit = 1

TIME OUT?

YES

Forcibly terminated

(see Figure 6.4.3.)

YES

Note 1: When an erase operation started, the internal flash memory is automatically readied to run the Read Status command,

so that there is no need to enter the Read Status command until another command is entered.

Note 2: Inspect the Flash Status Register 2 ERASE (erase status), WRERR1 (write status 1) and WRERR2 (write status 2) bits

to check for erase error.

Figure 6.5.10 Block Erase Command

6.5 Programming the Internal Flash Memory

(4) Block Erase command

The Block Erase command erases the content of the internal flash memory one block at a time. To perform

this operation, write the Block Erase command (H’2020) to any address of the internal flash memory. Next,

write the Verify command (H’D0D0) to the last even address of the flash memory block to be erased (see

Table 6.5.3, “M32182F3 Target Blocks and Specified Addresses”).

The protected flash memory blocks cannot be erased by the Block Erase command.

Block erase operation is automatically performed by the internal control circuit, and whether the Block Erase

command has finished can be known by checking the Flash Status Register 1 (FSTAT1) FSTAT bit. (See

Section 6.4.2, “Flash Status Registers.”) While the FSTAT bit = "0" (busy), the next block erase operation (by

the Block Erase command) cannot be performed.

32182 Datasheet(PDF) 160 Page - Renesas Technology Corp