32182 datasheet(162/755 Pages) RENESAS

162 / 755 page

6-27

INTERNAL MEMORY

32182 Group User’s Manual (Rev.1.0)

6.5 Programming the Internal Flash Memory

START

Write the Read Status Register

command (H'7070) to any address

of the internal flash memory

Read any address of the

internal flash memory

END

Figure 6.5.12 Read Status Register Command

(7) Clear Status Register command

The Clear Status Register command clears the Flash Status Register 2 ERASE (erase status), WRERR1

(write status 1) and WRERR2 (write status 2) bits to "0". Write the Clear Status Register command (H’5050)

to any address of the internal flash memory, and Flash Status Register 2 is thereby initialized.

If an error occurs when programming or erasing the internal flash memory and the Flash Status Register 2

ERASE (erase status), WRERR1 (write status 1) or WRERR2 (write status 2) bit is set to "1", the next

programming or erase operation cannot be executed unless each status bit is cleared to "0".

START

Write the Clear Status Register command (H'5050)

to any address of the internal flash memory

END

Figure 6.5.13 Clear Status Register Command

(6) Read Status Register command

The Read Status Register command reads the content of Flash Status Register 2 (FSTAT2) that indicates

whether flash memory programming or erase operation has terminated normally. To read Flash Status Reg-

ister 2, write the Read Status Register command (H’7070) to any address of the internal flash memory. Next,

read any address of the internal flash memory, and Flash Status Register 2 (FSTAT2) will be read out.

32182 Datasheet(PDF) 162 Page - Renesas Technology Corp