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82G33 Datasheet(PDF) 28 Page - Intel Corporation |
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82G33 Datasheet(HTML) 28 Page - Intel Corporation |
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28 / 437 page ![]() Introduction 28 Datasheet 1.3.2 System Memory Interface The (G)MCH integrates a system memory DDR2 and DDR3 (82G33 GMCH and 82P35 MCH only) controller with two, 64-bit wide interfaces. The buffers support both SSTL_1.8 (Stub Series Terminated Logic for 1.8 V) and SSTL_1.5 (Stub Series Terminated Logic for 1.5 V) signal interfaces. The memory controller interface is fully configurable through a set of control registers. Capabilities of the system memory interface include: • Directly supports one or two channels of DDR2 or DDR3 (82G33 GMCH and 82P35 MCH only) memory with a maximum of two DIMMs per channel. • Supports single and dual channel memory organization modes. • Supports a data burst length of eight for all memory organization modes. • Supports memory data transfer rates of 667 MHz and 800 MHz for DDR2, and 800 MHz and 1066 MHz for DDR3. • I/O Voltage of 1.8 V for DDR2 and 1.5 V for DDR3. • Supports only un-buffered non-ECC DDR2 or DDR3 DIMMs • Supports maximum memory bandwidth of 6.4 GB/s in single-channel or dual- channel asymmetric mode, or 12.8 GB/s in dual-channel symmetric mode assuming DDR2 800 MHz. • Supports maximum memory bandwidth of 8.5 GB/s in single-channel or dual- channel asymmetric mode, or 17 GB/s in dual-channel interleaved mode assuming DDR3 1066 MHz. • Supports 512 Mb and 1 Gb DDR2 or DDR3 (82G33 GMCH and 82P35 MCH only) DRAM technologies for x8 and x16 devices. • Using 512 Mb device technologies, the smallest memory capacity possible is 256 MB, assuming Single Channel Mode with a single x16 single sided un-buffered non-ECC DIMM memory configuration. • Using 1 Gb device technologies, the largest memory capacity possible is 8 GB, assuming Dual Channel Mode with four x8 double sided un-buffered non-ECC DIMM memory configuration. • Supports up to 32 simultaneous open pages per channel (assuming 4 ranks of 8 bank devices). • Supports opportunistic refresh scheme. The (G)MCH has an arbitration scheme to refresh memory when the DRAM is idle. • Supports Partial Writes to memory using Data Mask (DM) signals. • Supports a memory thermal management scheme to selectively manage reads and/or writes. Memory thermal management can be triggered either by on-die thermal sensor, or by preset limits. Management limits are determined by weighted sum of various commands that are scheduled on the memory interface. |
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