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DA6021 Datasheet(PDF) 101 Page - Renesas Technology Corp

Part # DA6021
Description  HIGHLY INTEGRATED POWER MANAGEMENT IC FOR INTEL® ATOM™ Z3000 PROCESSOR
PDF  225 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

DA6021 Datasheet(HTML) 101 Page - Renesas Technology Corp

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DA6021
HIGHLY INTEGRATED POWER MANAGEMENT IC FOR
INTEL® ATOM™ Z3000 PROCESSOR
Company Confidential
Data Sheet
Version 3.A - Final
31-Jan-14
© 2014 Dialog Semiconductor GmbH
101 of 224
www.dialog-semiconductor.com
VDDQ_CTRL.
SLP_S4_B
VDDQ
VDDQ_SEL
VDDQ_EN
1
0
1
Off
1
1
1
On
x
x
0
Off
Table 57: VDDQ Truth Table
11.6.6.4
VDDQ Subsystems
V1P2S:
This voltage rail is used to supply mainly the MIP interface. In case of 1.24V DDR3 memory the input voltage of
this power domain is VDDQ and it acts as a power switch. For all other types of DDR3 memories the input
voltage is V1P8A and V1P2S is generated via a small LDO.
Description
Value [max, m
Ω]
Val
Input power path board resistance
20
-
Output power path board resistance
20
-
Input, output rails wirebond & internal FET RDS-ON
620
A,D,E
Table 58: V1P2S Power Switch Specification
Electrical Parameters in case of a LDO function
Symbol
Parameter
Min
Typ
Max
Unit
Notes/Condition
Val
Input requirement
Vin
Main input voltage
1.80
V
Supplied by V1P8A
-
Cin
V1P2S_IN
100
nF
-
Output requirement
Vnom
Nominal output
voltage
1.2
V
A
Vtol
Output voltage
tolerance
-2%
+2%
A
Cout
Output capacity
2.2
µF
-
Iout-DC
Output load current
1
50
mA
A
IQSC
Quiescent current
(operational)
10
µA
Iout-DC = 0mA
D,E
IQSC
Quiescent current
(sleep)
2
µA
Iout-DC = 0mA
D,E
PSRR
Power supply
rejection ratio
50
dB
Noise = 0.1Vpp, 1-
10kHz, ½ Iout-DC
D,E
Vnoise
Output noise
50
100
µVRMS 10-100kHz, ½ Iout-DC
D,E
Table 59: Electrical Parameter for V1P2S LDO



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