3886 datasheet(281/380 Pages) RENESAS

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3886 Group User’s Manual

APPLICATION

2.15 Flash memory

Fig. 2.15.4 Structure of Flash command register

2.15.4 Parallel I/O mode

In the parallel I/O mode, program/erase to the built-in flash memory can be performed by a general EPROM

programmer.

Set the programming mode of the EPROM programmer to M5M28F101 and set the memory area of

program/erase from 0100016 to 0FFFF16. Be especially careful when erasing; if the memory area is not set

correctly, the products will be damaged eternally.

Table 2.15.1 shows the setting of EPROM programmers when programming in the parallel I/O mode.

Table 2.15.1 Setting of EPROM programmers when parallel programming

Products

M38869FFAHP

M38869FFAGP

Programming adapter

PCA4738HF-80

PCA4738GF-80

Programming mode

M5M28F101

Memory area

0100016 to 0FFFF16

Flash command register

b7 b6 b5 b4 b3 b2 b1 b0

Flash command register

(FCMD: address FFF16)

At reset R W

Functions

Writing of software command

• Read command

• Program command

• Program verify command

• Erase command

• Erase verify command

• Reset command

• “0016”

• “4016”

• “C016”

• “2016”+ “2016”

• “A016”

• “FF16” + “FF16”

Note: The flash command register is a write-only register.

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