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DA6021 Datasheet(PDF) 158 Page - Renesas Technology Corp |
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DA6021 Datasheet(HTML) 158 Page - Renesas Technology Corp |
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158 / 225 page ![]() DA6021 HIGHLY INTEGRATED POWER MANAGEMENT IC FOR INTEL® ATOM™ Z3000 PROCESSOR Company Confidential Data Sheet Version 3.A - Final 31-Jan-14 © 2014 Dialog Semiconductor GmbH 158 of 224 www.dialog-semiconductor.com SVTM Block Diagram 16.2 Figure 66: SVTM Block Diagram Each specific implementation will connect the SVTM output as they deem appropriate except the PROCHOT_B and IRQ which must be connected to the SoC. Functional Description 16.3 The SVTM will react on voltage comparators placed on the VSYS node and comparators related to the bandgap module (this is related to temperature thresholds). In addition it will react to the measurements results from the ADC according to the programmed values. VSYS Input Trip Points for ADC Measurement 16.3.1 There are three configurable independent VSYS trip points: VWARNA: Warning zone A trip point. Will assert the DISA signal and interrupts the SoC when the level crosses below and above the trip point for longer than the programmed value. VWARNB: Warning zone B trip point. Will assert the DISB signal and interrupts the SoC when the level crosses below and above the trip point for longer than the programmed value. VCRIT: Warning zone CRITICAL trip point. Will assert the DISCRIT signal and interrupts the SoC when the level crosses below and above the trip point for longer than the programmed value. All the settings can be programmed via the configuration registers. It is assumed that these thresholds are programmed as VWARNA > VWARNB > VCRIT. VSYS monitoring will only be executed while being in SoC_S0 state. SVTM DISA DISCRIT DISB SoC Subsystem A Subsystem B Subsystem C ADC PMIC BG SYS0 BAT1 BAT0 SYS1 SYS2 VSYS REF Under & over voltage Overtemp & Temp warning |
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