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RZ/G3E Datasheet(PDF) 63 Page - Renesas Technology Corp

Part # RZ/G3E
Description  RZ Family, RZ/G Series
PDF  112 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RZ/G3E Datasheet(HTML) 63 Page - Renesas Technology Corp

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RZ/G3E Group
3. Electrical Characteristics
R01DS0477EJ0115 Rev.1.15
Page 63 of 112
Nov 28, 2025
Table 3.18
xSPI Timing (2/2)
1.8 V
3.3 V
Parameter
Symbol
Min.
Max.
Min.
Max.
Unit
Figure
DS low to CS high
tDSLCSH
tPERIOD × 0.8*7 —
tPERIOD × 0.8*7 —
ns
Figure 3.29
CS high to DS Tri-state
tCSHDST
0.0
tPERIOD
0.0
tPERIOD
ns
CS low to DS low*5
tCSLDSL
0.0
12.5*6
0.0
17.4*6
ns
DS Tri-state to CS low
tDSTCSL
0.0
—
0.0
—
ns
CK low to DS low*8
tCKLDSL
—
(0.45 + e) ×
tPERIOD – 2.0*9
—
(0.45 + e) ×
tPERIOD – 2.0*9
ns
Note: CK: XSPI0_CKP (XSPI0_CKN)
DS: XSPI0_DS
CS: XSPI0_CS0N, XSPI0_CS1N
Note 1.
Specification at 133 MHz / Specification at 100 MHz
Note 2.
These are values when the OEN assertion is extended in the Output Enable Asserting extension bit (COMCFG.OEASTEX =
1b).
Note 3.
These are the values when the CS assertion is extended in the CS asserting extension bit (LIOCFGCSn.CSASTEX = 1b).
Note 4.
The standard value for xSPI266 is 0.8 ns.
Note 5.
If the DS is high during the command & modifier phase when using JESD251 Profile 2.0 memory, the time from CS low to DS
high must also meet this specification.
Note 6.
When using JESD251 Profile 1.0 memory or JESD251 Profile 2.0 memory with LIOCFGCSn.LATEMD set to 0, this constraint
does not apply if the internal pull-down resistor of the DS pin is enabled.
Note 7.
These are the values when the tCKLDSL constraint is satisfied.
Note 8.
This constraint is necessary only to satisfy the tDSLCSH requirement specified in JESD251, which specifies that tDSLCSH must be
at least 80% of tPERIOD. Set LIOCFGCSn.CSNEGEX to the appropriate value to ensure the memory specification complies with
this constraint.
Note 9.
e: LIOCFGCSn.CSNEGEX (e = 0, 1)



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