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RZ/G3E Datasheet(PDF) 63 Page - Renesas Technology Corp |
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RZ/G3E Datasheet(HTML) 63 Page - Renesas Technology Corp |
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63 / 112 page ![]() RZ/G3E Group 3. Electrical Characteristics R01DS0477EJ0115 Rev.1.15 Page 63 of 112 Nov 28, 2025 Table 3.18 xSPI Timing (2/2) 1.8 V 3.3 V Parameter Symbol Min. Max. Min. Max. Unit Figure DS low to CS high tDSLCSH tPERIOD × 0.8*7 — tPERIOD × 0.8*7 — ns Figure 3.29 CS high to DS Tri-state tCSHDST 0.0 tPERIOD 0.0 tPERIOD ns CS low to DS low*5 tCSLDSL 0.0 12.5*6 0.0 17.4*6 ns DS Tri-state to CS low tDSTCSL 0.0 — 0.0 — ns CK low to DS low*8 tCKLDSL — (0.45 + e) × tPERIOD – 2.0*9 — (0.45 + e) × tPERIOD – 2.0*9 ns Note: CK: XSPI0_CKP (XSPI0_CKN) DS: XSPI0_DS CS: XSPI0_CS0N, XSPI0_CS1N Note 1. Specification at 133 MHz / Specification at 100 MHz Note 2. These are values when the OEN assertion is extended in the Output Enable Asserting extension bit (COMCFG.OEASTEX = 1b). Note 3. These are the values when the CS assertion is extended in the CS asserting extension bit (LIOCFGCSn.CSASTEX = 1b). Note 4. The standard value for xSPI266 is 0.8 ns. Note 5. If the DS is high during the command & modifier phase when using JESD251 Profile 2.0 memory, the time from CS low to DS high must also meet this specification. Note 6. When using JESD251 Profile 1.0 memory or JESD251 Profile 2.0 memory with LIOCFGCSn.LATEMD set to 0, this constraint does not apply if the internal pull-down resistor of the DS pin is enabled. Note 7. These are the values when the tCKLDSL constraint is satisfied. Note 8. This constraint is necessary only to satisfy the tDSLCSH requirement specified in JESD251, which specifies that tDSLCSH must be at least 80% of tPERIOD. Set LIOCFGCSn.CSNEGEX to the appropriate value to ensure the memory specification complies with this constraint. Note 9. e: LIOCFGCSn.CSNEGEX (e = 0, 1) |
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