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RZ/G3E Datasheet(PDF) 95 Page - Renesas Technology Corp |
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RZ/G3E Datasheet(HTML) 95 Page - Renesas Technology Corp |
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95 / 112 page ![]() RZ/G3E Group 3. Electrical Characteristics R01DS0477EJ0115 Rev.1.15 Page 95 of 112 Nov 28, 2025 3.5.21 PDM Timing Conditions: VOH = VDD18 × 0.5, VOL = VDD18 × 0.5, C = 30 pF (1.8 V) VOH = VDD33 × 0.5, VOL = VDD33 × 0.5, C = 30 pF (3.3 V) Drive strength: ×1, ×2, ×4, ×6 Table 3.30 PDM Interface Timing Parameter Symbol Min. Max. Unit Figure Clock period tPSYNC 2 32 tCCcyc = 208.33 ns (4.8 MHz)*1 Figure 3.64 Clock high-level period tPDCKWH tPSYNC × 0.45 tPSYNC × 0.55 ns Clock low-level period tPDCKWL tPSYNC × 0.45 tPSYNC × 0.55 ns Clock rise time tR-EDGE — 3*2 ns Clock fall time tF-EDGE — 3*2 ns Setup time tsu 15 — ns Figure 3.65, Figure 3.66 Hold time th 0 — ns Note 1. tCCcyc is the period of PDM_n_CCLK (n = 0, 1). Note 2. Output transition time from 20% to 80% PDMCLKnm tPDCKWH tPDCKWL tPSYNC tR-EDGE tF-EDGE n = 0, 1 m = 0 to 2 Figure 3.64 Timing of Clock Output (PDMCLKnm) PDMCLKnm (Output) tSU PDMDATnm (Input) tH n = 0, 1 m = 0 to 2 Figure 3.65 Timing of Clock Output (Synchronized with the rise of PDMCLKnm) |
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