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FS5502 Datasheet(PDF) 58 Page - NXP Semiconductors |
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FS5502 Datasheet(HTML) 58 Page - NXP Semiconductors |
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58 / 113 page  NXP Semiconductors FS5502 High voltage PMIC with multiple SMPS and LDO TA = −40 °C to 125 °C, unless otherwise specified. VSUP = VSUP_UVH to 36 V, unless otherwise specified. All voltages referenced to ground. Symbol Parameter Min Typ Max Unit 29 40 51 mV/μs 36 50 64 mV/μs 43 60 77 mV/μs 51 70 89 mV/us 58 80 102 mV/μs 65 90 115 mV/μs 73 100 127 mV/μs 102 140 178 mV/μs 124 170 216 mV/μs 146 200 254 mV/μs VPRE_SLOPE Slope compensation (OTP_VPRESC[5:0] bits) 175 240 305 mV/μs TPRE_UV_DFS VPRE_UVL filtering time to go to DEEP-FS during VPRE start up 1.8 2 2.2 ms TPRE_DT Dead time to avoid cross conduction (this timing does not take into account the external FET turn ON/OFF times) 20 30 40 ns RPRE_DIS Discharge resistor (when VPRE is disabled) 250 500 1000 Ω IPRE_SW_LKG PRE_SW leakage — — 10 µA RDRV_OFF HS and LS gate driver pull-down resistor when VPRE is disabled 5 — 35 kΩ RBOOT_OFF PRE_BOOT pull-down resistor when VPRE is disabled 1.2 — 2.6 kΩ IBOOT_LKG PRE_BOOT leakage — — 10 µA Table 62. VPRE electrical characteristics...continued 14.5 VPRE external MOSFETs MOSFETs selection: • Logical level NMOS, gate drive comes from VBOS (5.0 V) • VDS > 60 V for 24 V truck, bus applications • VDS > 40 V for 12 V automotive applications • Qg < 15 nC at Vgs = 5.0 V is recommended for 455 kHz • Qg < 7 nC at Vgs = 5.0 V is recommended for 2.22 MHz • Recommended references Applications Fpre Ipre < 2.0 A Ipre < 4.0 A Ipre < 6.0 A Ipre < 10 A 455 kHz BUK9K25-40E, BUK9K18-40E BUK9K25-40E, BUK9K18-40E BUK9K18-40E BUK9K18-40E, NVTFS5C471NLWFTAG, HS = BUK9M9R5-40H, LS = BUK9M3R3-40H 12 V 2.22 MHz BUK9K25-40E, BUK9Y29-40E BUK9K25-40E, BUK9Y29-40E BUK9K25-40E, BUK9Y29-40E na 24 V 455 kHz BUK9K35-60E, BUK9K52-60E BUK9K35-60E, BUK9K52-60E BUK9K35-60E BUK9K12-60E Table 63. VPRE external MOSFETs recommendation Other MOSFETs are possible but should have similar performances as compared to the recommended references. The maximum current at 2.22 MHz is limited to 6.0 A for which the efficiency is equivalent to 10 A at 455 kHz. The power dissipation in the external MOSFETs is important and the junction temperature may rise above 175 ℃. VPRE switching slew rate can be configured by I2C to align with external MOSFET selection, VPRE switching frequency, and to optimize power dissipation and EMC performance. It is recommended to configure the maximum slew rate by OTP and reduce it later by I2C if needed. FS5502 is using current source to drive the external MOSFET so adding an external serial resistor with the gate does not affect the slew rate. It is recommended to change the current source selection by I2C to change the slew rate. FS5502 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved. Product data sheet Rev. 4 — 27 October 2021 58 / 113 |
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