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FS5502 Datasheet(PDF) 59 Page - NXP Semiconductors

Part # FS5502
Description  High voltage PMIC with multiple SMPS and LDO
PDF  113 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

FS5502 Datasheet(HTML) 59 Page - NXP Semiconductors

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NXP Semiconductors
FS5502
High voltage PMIC with multiple SMPS and LDO
VPRE MOSFET switching time can be estimated to TSW = (QGD + QGS / 2) /
IPRE_GATE_DRV using the gate charge definition from Figure 12. QGD and QGS can be
extracted from the MOSFET data sheet.
aaa-030992
VDS
ID
VGS(pl)
VGS
VGS(th)
QGS2
QGS
QG(tot)
QGD
QGS1
Figure 12. MOSFET gate charge definition
14.6 VPRE efficiency
VPRE efficiency versus current load is given for information based on external
component criteria provided and VSUP voltage 14 V. If the conditions change, it has to
be recalculated with the FS5502_PDTCAL tool. The real efficiency has to be verified by
measurement at the application level.
Current (A)
0
1
3
5
7
VPRE Efficiency
9
8
10
6
4
2
aaa-035376
Efficiency
(%)
65
455 kHz_5 V
455 kHz_4.1 V
455 kHz_3.3 V
2.22 MHz_5 V
2.22 MHz_4.1 V
2.22 MHz_3.3 V
Fpre
Ext. C and L
Ext. MOSFET's
455
2220
Cin
47
47
ESR Cin
VPRE at 455 kHz: BUK9K18-40E
VPRE at 2.22 MHz: BUK9K25-40E
30
30
Cout
66
44
ESR Cout
10
10
L coil
6.8
2.2
GHS_drive
5
5
HS_Rdson
17
24
HS_QGtot
7
5
HS_QGD
3
2.4
HS_QGS
2
1.4
HS_Igate
900
900
THS_sw
5
4
GLS_drive
5
5
LS_Rdson
17
24
LS_QGtot
7
5
LS_QGD
3
2.4
LS_QGS
2
1.4
LS_Igate
900
900
TLS_sw
5
4
kHz
µF
mΩ
µF
mΩ
µH
DCR coil
25
25
Rshunt
10
10
mΩ
mΩ
V
mΩ
nC
nC
nC
mA
ns
V
mΩ
nC
nC
nC
mA
LS_QRR
16
7.6
nC
ns
67.5
70
72.5
75
77.5
80
82.5
85
87.5
90
92.5
95
97.5
100
Figure 13. VPRE theoretical efficiency
FS5502
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2021. All rights reserved.
Product data sheet
Rev. 4 — 27 October 2021
59 / 113



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