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GD3160 Datasheet(PDF) 2 Page - NXP Semiconductors |
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GD3160 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 114 page ![]() NXP Semiconductors GD3160 Advanced IGBT/SiC gate driver 2 Features and benefits This section summarizes the key features, safety features, and regulatory approvals for the GD3160. 2.1 Key features • Integrated Galvanic signal isolation (up to 8 kV) • High gate current integrated: 15 A source/sink capable • SPI interface for safety monitoring, configuration, and diagnostic reporting • Supports high switching frequencies: PWM up to 100 kHz • Fail-safe state management from LV and HV domain for user-selectable safe state • Programmable gate voltage regulator • Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors • Configurable desaturation and current sense optimized for protecting SiC and IGBTs • Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC • Real-time VCE and VGE reporting via INTA pin • Integrated ADC for monitoring parameters from HV domain • CMTI > 100 V/ns • Compatible with 200 to 1700 V IGBT/SiC, power range > 125 kW • Operating temperature range −40 to 125 °C • Available in 5.0 or 3.3 V logic interface variants • Small package footprint (10 mm x 11 mm) 32-pin SOIC 2.2 Safety features • Certified compliant with ISO 26262, supporting ASIL D level functional safety • Error checking of SPI and configuration data with 8-bit CRC • Autonomously manages severe faults and reports status via configurable INTB and/or INTA pins, and SPI interface • Current, DESAT, and temperature sense inputs and ADC reporting for IGBT/SiC monitoring and protection • Interrupt pins (INTA and INTB) for fast response to faults • Built-in self-check of all analog and digital circuits • Continuous watchdog of communications across isolation barrier • Deadtime enforcement • Over- and undervoltage supervision of all power supplies on both low- and high-voltage sides • Dedicated fail-safe state management pins on both low- and high-voltage sides • VGE real-time cycle-by-cycle monitoring 2.3 Safety and regulatory approvals • Reinforced isolation per DIN V VDE V 0884-10 • Withstand 5000 V rms (1 minute) isolation per UL 1577 • AEC-Q100 grade 1 automotive qualified GD3160 All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 13 — 6 May 2024 2 / 114 |
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