GD3160 datasheet(65/114 Pages) NXP

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NXP Semiconductors

GD3160

Advanced IGBT/SiC gate driver

Figure 31. INTA as a real-time VGE reporter

When the gate voltage has surpassed VGEON_TH, the gate monitor circuitry interprets this as ON status,

and INTA is actively pulled to logic high. When the gate falls below VAMC_TH, the gate monitor circuitry

interprets an OFF status and INTA is pulled to logic low. The delay between gate voltage passing thresholds is a

maximum 240 ns, represented by tRTRPT_DLY in Figure 31.

11.10 Power device overtemperature detection circuitry

11.10.1 Introduction

Directly monitoring the power device's temperature provides four advantages.

The first benefit is that the IGBT (and the system) can be protected against catastrophic IGBT failure from

excessive temperature or a violation of its safe operating area at elevated temperature.

The second benefit is that the inverter need not be unnecessarily derated at high power because the IGBT's

temperature is not known. Monitoring the IGBT's die temperature allows the controller to continue operating at

conditions that might otherwise risk failure.

The third benefit is that the IGBT's temperature can be monitored for long term wear out mechanisms.

The fourth benefit is that the OTW signal allows the system to respond to unexpectedly high temperature before

an OTSD fault triggers shutdown autonomously, which may not be desired.

11.10.2 Features

The features of the overtemperature detection circuitry are:

• Accurate current source available to drive temperature sense diodes, or disabled for thermistor-based

measurements

• A 10-bit ADC to monitor the voltage across the temperature sense element

• On-the-fly programmable overtemperature and overtemperature warning thresholds

• 2.0 ms filters for overtemperature and OT warning

• 10-bit temperature value provided in the SPI temperature register and available as a duty cycle encoded

signal at the AOUT pin

• Configurable gain and offset parameters to increase dynamic range of temperature measurements

GD3160

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Product data sheet

Rev. 13 — 6 May 2024

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GD3160 Datasheet(PDF) 65 Page - NXP Semiconductors