GD3160 datasheet(69/114 Pages) NXP

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NXP Semiconductors

GD3160

Advanced IGBT/SiC gate driver

The GD3160 monitors the temperatures of the VDD regulator on the low-voltage domain, the GL transistor on

the high-voltage domain, and the GH transistor on the high-voltage domain. The GH sensing element is near

the VCCREG regulator, so it is protected, too. The VDD and GL circuits are used for overtemperature shutdown

only. Their temperatures cannot be read via the SPI or the AOUT pin. Temperature values are available only for

the GH temperature sensor on the high-voltage domain.

The output conversion values for AMUXIN and TSENSE are 000h to 3FFh (000h for 0 V; 3FF for VREF).

For VCC and VCCREG, the conversion values are 000h to 3FFh (000h for 0 V; 3FF for 30 V).

For VEE measurement through the AMUX, the conversion values are 000h (when VEE = –15 V) and 3FFh

(when VEE = 0 V). The voltage at the VEE pin (referred to as GND2, negative in most cases) is converted by

the ADC in Equation 3:

(3)

To perform a read of the ADC, set the bits AMUX_SEL [2:0] according to the signal to be read. Next perform

a read of the REQADC register. The result is then returned in the REQADC register. Note that the REQADC

11.13 24-bit serial peripheral interface

11.13.1 Introduction

The serial peripheral interface (SPI) has the following features:

• Full duplex, four-wire synchronous communication

• Responder mode operation only

• Fixed SCLK polarity and phase requirements

• Fixed 16-bit command word with 8-bit cyclic redundancy check (CRC)

• SCLK operation up to 10 MHz

• Compatible with daisy-chain operation

SPI communication follows Figure 35:

GD3160

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Product data sheet

Rev. 13 — 6 May 2024

69 / 114

GD3160 Datasheet(PDF) 69 Page - NXP Semiconductors